High-frequency modeling of GaN∕SiC blue light-emitting diodes

Abstract

We report on this work a model to accurately predict the electrical behavior of double-heterostructure GaN∕SiC blue light-emitting diodes up to microwave frequencies. A procedure to extract the series resistance (Rs) from the reflection coefficient is suggested. This procedure offers the advantage of using measurements without any bias current and therefore the obtained values of Rs are influenced neither by the device heating nor by inaccuracies in the calculation of the ideality factor. The junction capacitance and conductance measured in the range 1kHz–10MHz shows two different relaxation mechanisms, and the total capacitance can be fitted very accurately to a double Lorentzian function. Blue light-emitting diodes and lasers based on gallium nitride (GaN) semiconductor compounds represent one of the most important breakthroughs in electronics and optoelectronics of recent years. The combination of silicon carbide (SiC) and GaN has recently enabled low-cost blue-emitting diodes to be introduced in industry.

Radiation Performance of Gan and Inas/Gaas Quantum Dot Based Devices Subjected to Neutron Radiation

“…However, since the ideality factor obtained in the GaN sample is greater than 2, the SNS analysis is therefore unaccountable for the current behavior. Such behavior is reported to be either due to an excessive contact resistance between metal and the p-type layer of the sample or the deep-level trap-assisted tunneling mechanism [21]. Figure 2 shows the I-V characteristics of the QDs samples, indicating a significant increment in the reverse-bias leakage current densities of up to 2 orders of magnitude under the maximum neutron irradiation of 9×10 13 n/cm 2 .…”

Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

“…During the last decade, crystalline silicon carbide has been extensively studied due to its wide applications in heterojunction structures, solar cells, optoelectronic devices, smart sensors, and high-temperature engineering materials [1][2][3][4][5]. Its unique physical and optical properties such as a wide band gap, excellent thermal conductivity, high breakdown electric field, and high saturated electron drift velocity make it a suitable semiconductor material for operating at high temperature, high frequency, high power, and chemically hostile environment.…”

A simple blue light pulse generator with GaN/SiC light emitting diodes for the time response testing of PMTs

“…The parasitic inductance of the bonding wire was identified as the main limiting factor in the high frequency behaviour of the device. 15 In addition, the relatively large series resistance of these LEDs, between 13 and 25 , makes the diode impedance close to the generator one. Therefore the model predicts small ringing effects.…”

“…6. 15 It includes two parasitic elements C p , and L p . The former simulates the capacitance of the device package, the latter the inductance of the bonding wires.…”