High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers

Abstract

In this letter, we report the high-frequency modulation of GaAs/AlGaAs near-infrared (NIR) light-emitting diodes (LEDs) with gallium-doped zinc oxide (GZO) prepared by atomic layer deposition as a current spreading layer. This report analyzes the effects of aperture area of the NIR LEDs on minority carrier lifetime and further investigates the required injection current to achieve the 3-dB frequency bandwidth of 100 MHz. At the same injection current density, the LEDs with different aperture areas always exhibit the same minority carrier lifetime, which is inversely proportional to the square root of current density. It means that the GZO layer plays a good current spreading in the lateral direction from the ohmic contact of NIR LEDs, which shows the lower contact resistance and lower forward voltage.Index Terms-GaAs, LEDs, atomic layer deposition (ALD), gallium-doped ZnO (GZO), minority carrier lifetime, 3-dB modulation bandwidth.

Ordered AlxGa1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

“…This allows for its electrical and optical properties to be easily tuned as a function of composition . AlGaAs is commonly utilized in nanoelectronics, including heterojunction bipolar transistors and high electron mobility transistors. , Additionally, AlGaAs is regularly used in photonic and optoelectronic devices, such as light-emitting diodes (LEDs), , lasers, , distributed Bragg reflectors (DBRs), , and tandem-junction solar cells. , Despite its usefulness as a tunable and functional ternary alloy semiconductor, AlGaAs processing poses a multitude of challenges, particularly for the fabrication of micro- and nano-structures. Dry etching is capable of accurately generating high-aspect-ratio features, though ion bombardment can be particularly detrimental to the electrical and optical properties of semiconductor nanostructures with high surface-to-bulk-state ratios .…”

“…41 AlGaAs is commonly utilized in nanoelectronics, including heterojunction bipolar transistors and high electron mobility transistors. 42,43 Additionally, AlGaAs is regularly used in photonic and optoelectronic devices, such as light-emitting diodes (LEDs), 44,45 lasers, 46,47 distributed Bragg reflectors (DBRs), 48,49 and tandem-junction solar cells. 50,51 Despite its usefulness as a tunable and functional ternary alloy semiconductor, AlGaAs processing poses a multitude of challenges, particularly for the fabrication of micro-and nano-structures.…”