High‐frequency noise modeling of GAN HEMT with double recessed barrier layer

Abstract

A physics-based high-frequency noise model of AlGaN/ GaN HEMT with double recessed barrier layer (DRBL) is presented. A conventional GaN HEMT model is established on TCAD and verified by measurement results. A noise model of DRBL GaN HEMT up to 40 GHz is investigated based on the established model. The results show that DRBL HEMT reduces the high frequency noise and the reduction becomes more obvious as the frequency increases. Further investigation about noise performance is studied by changing the depth and length of the recessed regions. The results show that DRBL HEMT obtains the best noise performance when the length and depth are 400 nm and 9 nm respectively and has application potential in the development of millimeter waves low noise devices.