High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

Deen, M. Jamal; Chen, Chih‐Hung; Asgaran, S.; Rezvani, G.A.; Tao, J.; Kiyota, Yukihiro

doi:10.1109/ted.2006.880370

Cited by 110 publications

(84 citation statements)

References 45 publications

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“…(13)]. However, many previous works including [15] used an incorrect definition of the channel conductance for the shortchannel MOSFETs as mentioned in [13].…”

Section: Analytical Channel Thermal Noise Modelingmentioning

confidence: 99%

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Jeon¹,

Park²,

Shin³

2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.

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“…(13)]. However, many previous works including [15] used an incorrect definition of the channel conductance for the shortchannel MOSFETs as mentioned in [13].…”

Section: Analytical Channel Thermal Noise Modelingmentioning

confidence: 99%

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Jeon¹,

Park²,

Shin³

2010

JSTS:Journal of Semiconductor Technology and Science

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“…For the applications in low noise CMOS RF circuits such as low noise amplifier (LNA), accurate modeling of noise is quite important. In the past decade, HF noise characterization and modeling for bulk and floating body SOI MOSFETs has been widely studied [6][7][8][9][10][11][12][13][14][15], and some modeling methods have been proposed. In [16], the authors proposed a channel segmentation model for accurate channel noise by several independent MOS model.…”

Section: Introductionmentioning

confidence: 99%

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

Xiang¹,

Huang²,

Liu³

et al. 2017

PIER M

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Abstract-We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-µm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y -parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.

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“…For long channel MOSFET devices, the model proposed by Van der Ziel successfully predicts the channel noise [3]. For short channel devices, values of observed channel noise were higher than predicted by the Van der Ziel model [4][5][6]. Several models of channel thermal noise of short channel MOSFET devices operating at radio frequencies have been proposed recently [4] and [7].…”

Section: Introductionmentioning

confidence: 99%

“…For short channel devices, values of observed channel noise were higher than predicted by the Van der Ziel model [4][5][6]. Several models of channel thermal noise of short channel MOSFET devices operating at radio frequencies have been proposed recently [4] and [7]. At RF frequencies, the channel thermal noise causes an induced gate noise current to flow.…”

Section: Introductionmentioning

confidence: 99%

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High frequency channel noise measurement and characterization in deep submicron MOSFETs

Allam

Filanovsky

2010

Analog Integr Circ Sig Process

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We evaluate and compare several closed form expressions of channel thermal noise used in circuits with MOSFET devices operating at high frequencies. To verify and compare these models, NMOS devices with channel widths of 120 lm (20 lm * 6 fingers) and channel lengths of 0.18, 0.36, and 0.54 lm were tested. A comparison of extracted and calculated noise data indicates that a model based on drain and overdrive voltages of short channel devices operating at RF frequencies provides the best match between extracted and calculated results for the channel thermal noise over a frequency range of 3 to 6 GHz and a gate overdrive voltage range of 0.2 to 1.2 V.

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High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

Cited by 110 publications

References 45 publications

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

Investigation of Thermal Noise Factor in Nanoscale MOSFETs

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

High frequency channel noise measurement and characterization in deep submicron MOSFETs

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