High-frequency operation potential of the tunnel emitter transistor

Aderstedt, E.; Lundgren, Per

doi:10.1016/s0038-1101(02)00038-2

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…This value of hole effective mass is 0.58m for a free Fermi gas model of carriers at the emitting electrode. A value of 0.57m has been used earlier as a fitting parameter in a high frequency tunnel emitter transistor model [23]. The value is also consistent with the evidence of light holes near the top of the oxide valence band [24].…”

Section: Discussionsupporting

confidence: 60%

Determination of electron and hole effective masses in thermal oxide utilizing an n-channel silicon MOSFET

Chanana¹

2014

IOSRJAP

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Section: Discussionsupporting

confidence: 60%

Determination of electron and hole effective masses in thermal oxide utilizing an n-channel silicon MOSFET

Chanana¹

2014

IOSRJAP

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“…In particular, IMPATT diodes [48,49], fast resonant tunnelling diodes, and tunnel emitter transistors [50][51][52][53][54][55][56] made of silicon carbide and having excellent dc and RF performance have been proposed and realized. These devices are being developed for microwave power amplifier and oscillator applications.…”

Section: Type Ofmentioning

confidence: 99%

Wide gap semiconductor microwave devices

Buniatyan

Aroutiounian

2007

J. Phys. D: Appl. Phys.

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A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented.We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed.

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“…The tunnel Metal-Oxide-Semiconductor (MOS) emitter transistor [1][2][3][4] is a pMOS structure in which the n-silicon substrate is taken as a collector, the metal electrode serves as an emitter while a base is induced by the inversion hole layer and is accessed to through the adjacent p + -contact (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

“…1). The positive aspects of the performance of this transistor are very small base transit time [4], satisfactory high-frequency properties [3] and a high gain value [2][3][4]. The latter relies on the dominance of the electron tunneling over the hole tunneling [1,2] and also on the intrinsic generation of minority carriers by the injected hot electrons [4].…”

Section: Introductionmentioning

confidence: 99%