High frequency optomechanical disk resonators in III–V ternary semiconductors

Guha, Biswarup; Mariani, Silvia; Lemaı̂tre, A.; Combrié, Sylvain; Leo, Giuseppe; Favero, Iván

doi:10.1364/oe.25.024639

Cited by 24 publications

(37 citation statements)

References 37 publications

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“…Considering the uncertainty on the photoelastic coefficients, the measured g 0 /2π = 380 kHz is very close to the calculations solely including the photoelastic and moving boundary contributions. This is consistent with the fact that the thermo-mechanical term [23] is negligible in our system (discussion in Supplementary). The corresponding mechanical linewidth (Fig.…”

Section: Probing Of Brownian Motion Of the Oscillatorsupporting

confidence: 91%

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Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

et al. 2019

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Oscillators in the GHz frequency range are key building blocks for telecommunication and positioning applications. Operating directly in the GHz while keeping high frequency stability and compactness, is still an up-to-date challenge. Recently, optomechanical crystals have demonstrated GHz frequency modes, thus gathering prerequisite features for using them as oscillators. Here we report on the demonstration, in ambient atmospheric conditions, of an optomechanical oscillator designed with an original concept based on bichromaticity. This oscillator is made of InGaP, a low loss and TPA-free piezoelectric material which makes it valuable for optomechanics. Self-sustained oscillations directly at 3 GHz are routinely achieved with a low optical power threshold of 40 µW and short-term linewidth narrowed down to 100 Hz in agreement with phase noise measurements (-110 dBc/Hz at 1 MHz from the carrier) for free running optomechanical oscillators.

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Section: Probing Of Brownian Motion Of the Oscillatorsupporting

confidence: 91%

“…To quantify the influence of photothermal forces, we use the model developed in [23], which takes into account the evolution of temperature in the OMC :…”

Section: Influence Of Photothermal Forces On Anti-damping and Opticalmentioning

confidence: 99%

Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

et al. 2019

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“…High optical confinement can be achieved, with optical quality factor as high as 2 × 10 5 . Further improvement in optical quality factor can be done if one performs surface post-treatment as indicated in [31]. Comparing data and simulations, we have evidence that the higher optical quality factor modes correspond to TE-modes, supporting our hypothesis that improvement of the quality factors is due to the reduction in sidewall roughness.…”

Section: Resultssupporting

confidence: 75%

“…6d), where the fitted model reveals an intrinsic optical quality factor of Q opt = 2.03 × 10 5 ; the observed splitting is accounted for in the fitting model and is due to clockwise and counter-clockwise mode coupling. This quality factor is on pair with those obtained through dry-etching using hard [43] or soft mask [32], yet lower than those of passivated wet-etched disks [31].…”

Section: Optical and Mechanical Characterizationmentioning

confidence: 51%

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Benevides¹,

Ménard²,

Wiederhecker³

et al. 2019

Opt. Mater. Express

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A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for a smooth device sidewall is discussed. Using the final recipe, optomechanical microdisk resonators are fabricated. The results show a very high optical quality factors of Q opt > 2 × 10 5 , among the largest already reported for dry-etching devices. The final devices are also shown to present high mechanical quality factors and an optomechanical vacuum coupling constant of g 0 = 2π × 13.6 kHz enabling self-sustainable mechanical oscillations for an optical input power above 1 mW. OCIS codes: (130.3990) Micro-optical devices; (230.4000) Microstructure fabrication; (220.4880) Optomechanics 1. Introduction Harnessing the confinement of light with wavelength-scale waveguides and cavities has enabled the realization of table-top scale nonlinear optical phenomena in silicon-compatible photonic chips. Recent examples show the versatility of this integrated photonics approach, such as frequency comb generation [1, 2], quantum computation [3-8], low voltage eletro-optical modulation [9], and optical to microwave coherent conversion [10]. One key ingredient that may also boost this revolution is the interaction between light and mechanical degrees of freedom, enabling both read-out and actuation of mesoscale mechanical modes in waveguides [11] and cavities [12][13][14][15], paving the road towards the sound circuits revolution [16,17]. Throughout the quest for better suited cavity geometries that can host optical and mechanical waves, microdisk cavities have proven to be a simple and effective choice. Their tight radial confinement of whispering gallery optical waves and rather strong interaction with radial breathing mechanical modes lead to high optomechanical coupling rates [18][19][20], which are necessary for efficient device-level functionalities [7,[21][22][23]. Other ingredients in the optomechanical enhancement are the cavity or waveguide material properties. Although silicon is widespread in many optomechanical devices [14,[24][25][26][27] due to its mature fabrication, the interest in III-V materials for optomechanical devices has increased [28-32] due to their unique optical, electronic and mechanical properties. Gallium Arsenide (GaAs), for instance, is advantageous because of its very high photoelastic coefficient [33], which leads to large electrostrictive forces and optomechanical coupling [18,34]. Moreover, optically active layers can be easily grown on GaAs wafers, allowing the fabrication of light-emitting optomechanical devices [35][36][37].Despite the tougher challenges in fabricating high optical quality factor in GaAs cavities, in comparison to the more mature fabrication of silicon, both wet and dry chemistry etching have been successfully developed. Wet etching, followed by surface passivation, resulted in record high intrinsic optical quality factors of 6 × 10 ...

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“…In the past decades, optical micro-and nano-resonators have been established as indispensable components for guided-wave and free-space photonic and plasmonic systems due to their ability to trap light, provide frequency selective response and foster enhanced local fields leading to strong light-matter interaction [1]. They have been realized in almost all available material systems, ranging from silicon [2,3], III-V semiconductors [4], fused silica [5], and chalcogenide glasses [6], to the emerging field of 2D photonic materials [7]. Resonant systems come in many forms, namely, ring/disk and sphere cavities [2,5], (plasmonic) nanoantennas [8], photonic crystal structures [9,10], and metamaterials/metasurfaces [11,12], to name a few.…”

Section: Introductionmentioning

confidence: 99%

On the calculation of the quality factor in contemporary photonic resonant structures

et al. 2019

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The correct numerical calculation of the resonance characteristics and, principally, the quality factor Q of contemporary photonic and plasmonic resonant systems is of utmost importance, since Q defines the bandwidth and affects nonlinear and spontaneous emission processes. Here, we comparatively assess the commonly used methods for calculating Q using spectral simulations with commercially available, general-purpose software. We study the applicability range of these methods through judiciously selected examples covering different material systems and frequency regimes from the far-infrared to the visible. We take care in highlighting the underlying physical and numerical reasons limiting the applicability of each one. Our findings demonstrate that in contemporary systems (plasmonics, 2D materials) Q calculation is not trivial, mainly due to the physical complication of strong material dispersion and light leakage. Our work can act as a reference for the mindful and accurate calculation of the quality factor and can serve as a handbook for its evaluation in guided-wave and free-space photonic and plasmonic resonant systems.

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High frequency optomechanical disk resonators in III–V ternary semiconductors

Cited by 24 publications

References 37 publications

Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

On the calculation of the quality factor in contemporary photonic resonant structures

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High frequency optomechanical disk resonators in III–V ternary semiconductors

Cited by 24 publications

References 37 publications

Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

Optomechanical gigahertz oscillator made of a two photon absorption free piezoelectric III/V semiconductor

Ar/Cl2 etching of GaAs optomechanical microdisks fabricated with positive electroresist

On the calculation of the quality factor in contemporary photonic resonant structures

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Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist