High frequency performance of sub-100nm UTB-FDSOI featuring TiN/HfO2 gate stack

Lim, Tao Chuan; Rozeau, O.; Buj, C.; Paccaud, M.; Lepilliet, S.; Dambrine, G.; Danneville, F.

doi:10.1016/j.sse.2008.09.022

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“…millimeter-wave range due to achievement of higher transconductance and cutoff frequency ( f T ) with the additional advantage of area and cost over III-V technology [9].…”

Section: Introductionmentioning

confidence: 99%

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

Kushwaha

Khandelwal

Duarte

et al. 2016

IEEE Trans. Microwave Theory Techn.

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In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted siliconon-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.Index Terms-BSIM-IMG, compact model, fully depleted silicon-on-insulator (FDSOI), MOSFET, parameter extraction, RF.

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“…millimeter-wave range due to achievement of higher transconductance and cutoff frequency ( f T ) with the additional advantage of area and cost over III-V technology [9].…”

Section: Introductionmentioning

confidence: 99%