High-frequency performance projections for ballistic carbon-nanotube transistors

Hasan, Sayed; Salahuddin, Sayeef; Vaidyanathan, Mani; Alam, Muhammad A.

doi:10.1109/tnano.2005.858594

Cited by 65 publications

(42 citation statements)

References 15 publications

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“…In this equation m g is transconductance of the transistor, GS C is the effective capacitor of transistor per unit length and L is the channel length of transistor. Effective capacitor was calculated from Equation (2.b) and m g was calculated from Equation (2.c) [6]. Some changes were applied to software that can perform calculations for more than one point.…”

Section: Modeling and Simulationmentioning

confidence: 99%

Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

Nouri-Bayat¹,

Kashani-Nia²

2017

ENG

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Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.

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Section: Modeling and Simulationmentioning

confidence: 99%

Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

Nouri-Bayat¹,

Kashani-Nia²

2017

ENG

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“…The AC system is obtained from the equivalent circuit [13] and the inuence of the barrier Schottky is introduced into the calculation of the current I DS and charge densities Q QS and Q QD .…”

Section: Equivalent Electrical Circuitmentioning

confidence: 99%

Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters

Diabi

Hocini

2015

Acta Phys. Pol. A

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In this work, we study the eects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The inuences of the physical parameters (height of the Schottky barrier (ΦSB) capacity of oxide layer (CINS) and geometrical parameter (nanotube diameter (dCNT )) on the static performance (ION /IOF F ) of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics (ID = f (VDS) for dierent values of VGS, and also the characteristics (ID = f (VGS)) for dierent values of VDS. All these circuits are studied for a xed value of ΦSB = 0.275 eV.

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“…A five-stage ring oscillator built on a single tube has been demonstrated [38]. Theoretical works predict THz operation at the ballistic limit [9,14,[57][58][59]. In this section, we discuss our work on assessing the high-frequency performance limits at the ballistic limit and in the presence of phonon scattering.…”

Section: High-frequency Performance Limitsmentioning

confidence: 99%

Device Simulation of SWNT-FETs

Guo

Lundstrom²

2008

Integrated Circuits and Systems

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High-frequency performance projections for ballistic carbon-nanotube transistors

Cited by 65 publications

References 15 publications

Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters

Device Simulation of SWNT-FETs

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