High frequency propagation of magnetic bubbles in dual conductor devices

Abstract

Articles you may be interested inAnalysis and reduction of conductor stress in magnetic bubble memory devices J. Vac. Sci. Technol. A 8, 73 (1990); 10.1116/1.576990 Highfrequency propagation and failure of contiguous disk magnetic bubble devices Abstract: Recent advances in the design of dualconductor bubble devices (invited) Garnet epitaxial films with an orthorhombic anisotropy and a 1.7 J.lm bubble diameter have been grown under strong compression on <110) oriented G.G.G. substrates. The bubble mobility in these films is about 60 mls . Oe and the maximum velocity is about SO m/s. Dual conductor circuits with an 8 J.l m period have been processed onto these films with a planar processing technology. It has been shown that a Poly Tetra Fluo~o Ethylene spacer reduces strongly the influence of the mechanical stresses in the overlay on the magnetic properties of the strongly magnetostrictive epi-layer. This spacer is necessary for good propagation characteristics. At 6 MHz propagation margins of 14% have been observed at a linear current density of 2 mAIJ.lm.

Fast 1- and 2-μm bubbles in films with orthorhombic anisotropy

“…[12], who propagated bubbles with good propagation margins at a frequency of at least 12.5 MHz. [12], who propagated bubbles with good propagation margins at a frequency of at least 12.5 MHz.…”