2013
DOI: 10.3367/ufnr.0183.201301b.0033
|View full text |Cite
|
Sign up to set email alerts
|

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

Abstract: Recent results (some previously unpublished) on the physics of charge density waves (CDWs) are reviewed. The synthesis conditions and unique properties of the quasi-onedimensional compound x Q , with highly coherent room temperature CDWs, are described. A peculiar type of`quantization' is discussed, which is observed in micro-and nanosamples of K 0X3 MoO 3 and NbSe 3 due to the discrete nature of CDW wave vector values. The electric-field-induced torsional strain (TS) in quasi-one-dimensional conductors is con… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2013
2013
2020
2020

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 73 publications
0
1
0
Order By: Relevance
“…The low dimensionality of the MX 3 materials makes them particularly susceptible to multiple phase transitions such as superconductivity [13][14][15][16], and charge density wave (CDW) formation [17][18][19][20]. The latter has motivated extensive, prolonged research into CDW transitions [1,[21][22][23], sliding [24,25], dynamics [26][27][28][29][30], and dimensional scaling [31][32][33][34][35][36][37][38] in the metallic TMTs, and their use for device applications [39][40][41][42].…”
Section: Introductionmentioning
confidence: 99%
“…The low dimensionality of the MX 3 materials makes them particularly susceptible to multiple phase transitions such as superconductivity [13][14][15][16], and charge density wave (CDW) formation [17][18][19][20]. The latter has motivated extensive, prolonged research into CDW transitions [1,[21][22][23], sliding [24,25], dynamics [26][27][28][29][30], and dimensional scaling [31][32][33][34][35][36][37][38] in the metallic TMTs, and their use for device applications [39][40][41][42].…”
Section: Introductionmentioning
confidence: 99%