High-Frequency Sections of Active Filters of Mixed-Signal
SoC Based on Current Amplifiers

Krutchinsky, Sergei G.; Prokopenko, N. N.

doi:10.5402/2012/319896

Cited by 6 publications

(7 citation statements)

References 7 publications

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“…The given figures are obtained in CAD Cadence Virtuoso with 0.25ȝm SiGe models of the integrated transistors of SG25H1 technology. The analysis of the obtained frequency responses of SA shows that their form corresponds exactly to the initial mathematical ratio (1) which confirms the theoretical recommendations [7][8], used when constructing the circuit of Fig. 1.…”

Section: Simulation Resultssupporting

confidence: 79%

“…The use of the bipolar transistors for increasing of Gm or switch to the operation amplifiers [5][6] even within the limits of the optimal structures [7][8] with regard of the parametric sensitivity doesn't reduce the asymptotic attenuation of the selective amplifier not only in the traditional high-frequency range but also in low-frequency one.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

SiGe Selective Amplifier of Microwave Range with High Asymptotic Attenuation

Krutchinsky

Prokopenko

Budyakov

et al. 2014

2014 Sixth International Conference on Computational Intelligence, Communication Systems and Networks

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The circuit principle of construction of the lowspeed selective amplifiers (SA) of microwave range on the energy-efficient converters "voltage-current" is developed. The proposed solution provides the possibility of cascade connection of several SA without additional loops of matching of the static mode. The principle of symmetry of the frequencydependent feedback loop underlies in the circuit construction. The reviewed architecture of SA in contrast with the wellknown ones reduces the asymptotic attenuation not only in the traditional high-frequency range but also in low-frequency one without a separating capacitor. This effect is achieved by using CMOS transistors in the input differential stage. The results of the mathematical analysis and simulation of SA on 0.25 um SiGe process are given. Shown the possibility of parametric optimization the sensitivity functions of quasi-resonance frequency and Q-factor SA instability parameters of passive elements.

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Section: Simulation Resultssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

SiGe Selective Amplifier of Microwave Range with High Asymptotic Attenuation

Krutchinsky

Prokopenko

Budyakov

et al. 2014

2014 Sixth International Conference on Computational Intelligence, Communication Systems and Networks

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“…Exclusion is filters with additional compensating feedbacks [3]. However, it requires a significant increase of number of active components and power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…One of the possible ways to improve sensitivity is to stabilize and complication of active converters, and also increase power consumption. Therefore, the investigation of the theory of this class of active filters proposed in [3,8] is relevant.…”

Section: Introductionmentioning

confidence: 99%

Microwave and mm-wave active-RC and RLC filters

Krutchinskiy

Prokopenko

Budyakov

2015

2015 IEEE 8th GCC Conference &Amp; Exhibition

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“…Traditionally, these problems are solved on the basis of the current amplifiers or voltage-current converters as potentially cost-effective and highfrequency active elements of the selective devices [4][5][6]. However, the properties of differential (paraphase) output these circuits from the general principles of their construction does not follow.…”

Section: Introductionmentioning

confidence: 99%