High frequency SiGe heterostructure devices

König,; Gruhle,

doi:10.1109/cornel.1997.649338

Cited by 10 publications

(20 citation statements)

References 15 publications

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“…There are two extremes to the way Ge is added to the base of the bipolar transistor for HBTs. The first is a rectangular or box Ge profile (figure 22 pioneered by Daimler Chrysler [75] and the other extreme is a linearly graded Ge profile (figure 22(b)) which has been pioneered by IBM [76]. A trapezoidal Ge base profile can also be used which is a compromise between the two designs (figure 22(c)).…”

Section: The Sige Heterojunction Bipolar Transistormentioning

confidence: 99%

“…The enhancements in the linearly graded base HBTs are more complicated in character with the enhancements ranging [75][76][77][78][79][80][81][82][83][84]. The lower solid curve was a fit from [75] while the dashed curve is fitted to the Hitachi data from [84]. between a near linear improvement with E g to exp Eg kB T [72].…”

Section: Eg Kb Tmentioning

confidence: 99%

“…Figure24. The cutoff frequency, f T , as a function of the base width, W B , from[75][76][77][78][79][80][81][82][83][84]. The lower solid curve was a fit from[75] while the dashed curve is fitted to the Hitachi data from[84].…”

mentioning

confidence: 99%

“…Figure25. The maximum oscillation frequency, f max , as a function of the base width, W B , from[75][76][77][78][79][80][81][82][83]. The solid curves are calculations on box profile HBTs for different base doping from[75].…”

mentioning

confidence: 99%

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Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

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Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.

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Section: The Sige Heterojunction Bipolar Transistormentioning

confidence: 99%

Section: Eg Kb Tmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

333

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“…Highly doped bases reduce base resistance and increase f max . Highly doped bases also reduce the minimum noise figure of the transistors [3]. A minimum noise figure of <0.5 dB with 24 dB associated gain has been demonstrated at 2 GHz ( [4] and references given therein).…”

Section: Importance Of Sige Strained Layers and Hbtsmentioning

confidence: 99%