High frequency signal response of impedance matched UHF carrier type head

Senda, Masakatsu; Koshimoto, Y.

doi:10.1109/20.617950

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…Similar coaxial-cable input has been used for other thin-film high-frequency magnetic devices. 7 Needed ac voltage in a 50 ⍀ cable is estimated by us at Ӎ0.15 V, to achieve a 30°precession cone angle in Ni 81 Fe 19 .…”

Section: Introductionmentioning

confidence: 99%

Generation of dc voltages by a magnetic multilayer undergoing ferromagnetic resonance

Berger

1999

Phys. Rev. B

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We predict that a dc voltage V appears across a magnetic multilayer undergoing ferromagnetic resonance. The voltage exists along a direction perpendicular to the layer plane. This is the magnetic analog of a photovoltaic cell. We calculate the rate of spin flip of conduction-electron spins, induced by the precession of the magnetization. Also, we solve the Valet-Fert spin-diffusion equation in the various layers. The dc voltage V is obtained by combining these two equations. For sufficiently large precession amplitude, V converges toward a fixed value of order Ӎប/eӍ10 V, where is the angular frequency of precession and e the electron charge.

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Section: Introductionmentioning

confidence: 99%

Generation of dc voltages by a magnetic multilayer undergoing ferromagnetic resonance

Berger

1999

Phys. Rev. B

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“…S ENSITIVE high-frequency carrier-type magnetic field sensor (or so-called GMI sensor) has been developed in a thin-film form [1]- [4] to meet sophisticated application requirements [4]- [6]. We have been developing miniaturized this sensor with higher sensitivity so as to sense 3D magnetic field with high spatial resolution and to integrate the sensor with CMOS ICs.…”

Section: Introductionmentioning

confidence: 99%

Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity

Kikuchi¹,

Ajiro²,

Yamaguchi³

et al. 2001

IEEE Trans. Magn.

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This paper discusses miniaturization and the sensitivity of a high-frequency carrier-type thin-film magnetic field sensor. We examined a lift-off process as fabrication process instead of ion-milling process to obtain an even edge and higher sensitivity when the sensor is miniaturized. Then, we used a thin conductive interlayer to control the domain structure and demonstrated high sensitivity. The sensor dimensions were miniaturized to 3 m wide, 1 m thick and 1 mm long. In this instance, an impedance change of 3 against external dc field was obtained. Moreover, a gain of 150 was achieved.Index Terms-Domain structure, high-frequency carrier-type thin-film magnetic field sensor, laminated sensor, lift-off.

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“…By using an impedance matching circuit, efforts were made to increase the sensitivity and achieved experimentally the -3 dB bandwidth of 70 MHz [4]. A sensor utilizing resonance circuits [2] seems difficult to show much broader bandwidth.…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity and Broad Bandwidth Magneto-Impedance Effect in Magnetic Microstrip Lines

et al. 1997

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Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/eng/view/object/?id=78ed32db-bd16-471d-b9fb-34badd594d79 http://nparc.cisti-icist.nrc-cnrc.gc.ca/fra/voir/objet/?id=78ed32db-bd16-471d-b9fb-34badd594d79Journal of The Magnetics Society of Japan Vol.21 , Supplement, No.S2 (1997) Abstract -A unique magneto-impedance effect by directly flowing microwave power in a Magnetic Microstrip Line was investigated. The microwave can be modulated by external fields that caused the impedance change due to the permeability variation in the magnetic strip. The amplitude variation of the microwave carrier was rectified to obtain output signals. A simple structure sensor has been developed that exhibited a high sensitivity of 10 mY/Oe, a high changing ratio of 48% in the transmission-line impedance and a broad signal bandwidth of 300 MHz. This sensor has great advantages of high sensitivity and broad bandwidth over MI sensors previously proposed.

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High frequency signal response of impedance matched UHF carrier type head

Cited by 15 publications

References 14 publications

Generation of dc voltages by a magnetic multilayer undergoing ferromagnetic resonance

Generation of dc voltages by a magnetic multilayer undergoing ferromagnetic resonance

Miniaturized high-frequency carrier-type thin-film magnetic field sensor with high sensitivity

High Sensitivity and Broad Bandwidth Magneto-Impedance Effect in Magnetic Microstrip Lines

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