High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions

Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

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“…The first published attempt for integrating an E-plane probe with a MMIC amplifier was described by Weinreb in 1999 [40] and shown in Fig. 20.…”

Section: B Waveguide Packaging Using Monolithic E-plane Probesmentioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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“…Differential circuits reduce-but do not eliminate-such coupling. In small-scale millimeter-wave ICs [11], circuit-circuit coupling through ground circuit common-lead inductance ("ground bounce") is greatly reduced through use of a microstrip wiring environment, in which all circuit ground-return currents are carried on a low-inductance ground plane on the back surface of the IC. In the substrate transfer process, a continuous, unbroken, ground plane lies under the full IC area, providing a low inductance ground system for low circuit-circuit coupling.…”

Section: Device Technologymentioning

confidence: 99%

An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology

Jaganathan

Krishnan

Mensa

et al. 2001

IEEE J. Solid-State Circuits

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“…By integrating active devices, some passives, and matching circuits on the same semi-insulating substrates, it has become possible to fabricate low-noise amplifiers (LNAs) up to frequencies of 100 GHz and beyond. 34,35 For example, LNAs having a gain of 17 dB, bandwidth of 30 GHz, and a noise figure of 6 dB have been fabricated and tested around 94 GHz. 36 The advantage of an LNA is that if it has adequate gain, it can dominate the noise figure of the following square-law detector, leading to a much lower NEP than can be achieved by direct conversion using the same square-law detector.…”

Section: A2 Preamplified Directmentioning

confidence: 99%

Fundamentals of Terrestrial Millimeter-Wave and THz Remote Sensing

Brown¹

2004

Selected Topics in Electronics and Systems

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Having long been the realm of molecular chemistry, astronomy, and plasma diagnostics, the upper millimeter-wave band (~100 to 300 GHz) and the THz region above it have recently become the subject of heightened activity in the engineering community because of exciting new technology (e.g., sub-picosecond optoelectronics) and promising new "terrestrial" applications (e.g., counter-terrorism and medical imaging). The most challenging of these applications are arguably those that demand remote sensing at a stand-off of roughly 10 m or more between the target and the sensor system. As in any other spectral region, remote sensing in the THz region brings up the complex issues of sensor modality and architecture, free-space electromagnetic effects and components, transmit and receive electronics, signal processing, and atmospheric propagation. Unlike other spectral regions, there is not much literature that addresses these issues from a conceptual or system-engineering viewpoint. So a key theme of this chapter is to review or derive the essential engineering concepts in a comprehensive fashion, starting with fundamental principles of electromagnetics, quantum mechanics, and signal processing, and building up to trade-off formulations using system-level metrics such as noiseequivalent power and receiver operating characteristics. A secondary theme is to elucidate aspects of the THz region and its incumbent technology that are unique, whether advantageous or disadvantageous, relative to other spectral regions. The end goal is to provide a useful tutorial for graduate students or practicing engineers considering the upper mm-wave or THz regions for system research or development.

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High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions

Cited by 72 publications

References 3 publications

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology

Fundamentals of Terrestrial Millimeter-Wave and THz Remote Sensing

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