High-gain InGaAsP-InP heterojunction phototransistors

Wright, P. D.; Nelson, R. J.; Cella, T.

doi:10.1063/1.91821

Cited by 47 publications

(9 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It yields a photogain of 6.3 × 10 3 . This value is similar to that of heterojunction phototransistors based on III–V semiconductors that have been reported in the order of 10 2 –10 3 . − If we take into account the finite absorbance (∼8%) of monolayer WS 2 under green light illumination, the photogain of In/Gr-WS 2 -Gr photodetectors can reach 7.8 × 10 4 .…”

Section: Resultssupporting

confidence: 84%

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain

et al. 2019

View full text Add to dashboard Cite

One of the primary limitations of previously reported two-dimensional (2D) photodetectors is a low frequency response (≪ 1 Hz) for sensitive devices with gain. Yet, little efforts have been devoted to improve the temporal response of photodetectors while maintaining high gain and responsivity. Here, we demonstrate a gain of 6.3 × 10 3 electrons per photon and a responsivity of 2.6 × 10 3 A/W while simultaneously exhibiting an ultrafast response time of 40−65 μs in a hybrid photodetector that consists of graphene-WS 2 -graphene junctions covered with indium (In) adatoms atop. The resultant responsivity is 6 orders of magnitude higher than that of conventional photodetectors comprising solely of a Au-WS 2 -Au junction. The photogain is provided mainly by the adsorbed In adatoms, from which photogenerated electrons can be transferred to the WS 2 channel, while holes remain trapped in In adatoms, leading to a photogating effect as electrons are recirculating during the residence of holes in In adatoms. At a gate voltage near the Dirac point of graphene, a detectivity of D* = 2.2 × 10 12 Jones and an ON/OFF ratio of 10 4 are achieved. The enhanced performance of the device can be attributed partly to the transparent graphene/WS 2 contact and partly to the strong capacitive coupling of the In adatoms with the WS 2 channel, which enables ultrafast carrier dynamics.

show abstract

Section: Resultssupporting

confidence: 84%

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain

et al. 2019

View full text Add to dashboard Cite

show abstract

“…16 . Combining gain and response time we obtain a gain-bandwidth product of ∼10 8 Hz: this figure, which compares well with industry-leading III–V phototransistors 32 33 , exceeds previously reported solution processed visible detectors by a factor exceeding 10 ( Supplementary Fig. 14 ).…”

Section: Resultssupporting

confidence: 83%

Planar-integrated single-crystalline perovskite photodetectors

et al. 2015

View full text Add to dashboard Cite

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors.

show abstract

“…2021, 9, 2101374 which is much better than the reported heterojunction phototransistors based on III−V semiconductors (10 2 -10 3 ). [30] The fast photoresponse is also essential for practical application. Figure 4e provides the time dependence of photocurrent of the OA-In 2 Se 3 device.…”

Section: Resultsmentioning

confidence: 99%

Optical Resonance Coupled with Electronic Structure Engineering toward High‐Sensitivity Photodetectors

Yan

Gao

et al. 2021

Advanced Optical Materials

View full text Add to dashboard Cite

applications comprising optical communication, [1] environmental monitoring, [2] biological detection, [3] and image sensing. [4] In recent years, owing to their novel structures and properties, such as high carrier mobility, [5] strong light-matter interaction, [6] and dangling-bond free surface, [7] the rapid development of 2D materials has provided ideas for breaking through traditional photo detectors. In particular, 2D indium selenides (InSe and α-In 2 Se 3 ) are natural direct bandgap semiconductors in multilayer forms, [8] which allow an efficient generation of electron-hole pairs under photoexcitation. Therefore, 2D indium selenides could be the desirable candidates for photodetector applications. However, due to their atomically thin thickness, the inherent weak light absorption of single 2D indium selenides remains a major challenge for device development. In addition, most 2D photodetectors work in either photodiode or photogating mode, which inevitably requires a trade-off between responsivity and response speed. In the photodiode structure, devices exhibit a fast response speed with the aid of built-in fields, but suffer from a poor responsivity. [9] In photogating photodetectors, the trapped carriers could act as a local gate, which results in a high responsivity and photoconductive gain, accompanied by a slow response rate. [10] Ultrasensitive photodetectors with high responsivity, detectivity, and fast response rate have triggered urgent demand in extensive applications. In recent years, 2D indium chalcogenides have emerged as appealing photoactive materials due to their excellent electrical and optoelectronic properties. However, suffering from the weak optical absorption induced by atomically thin thickness as well as the short lifetime of photogenerated carriers, conventional 2D indium chalcogenides photodetectors commonly exhibit limited photodetection performance. Herein, a universal strategy integrating 2D indium chalcogenides and Si nanostripe array is demonstrated. The Si nanostripes afford Mie-type resonance, which facilitates light absorption. In addition, the introduction of photoconductive gain and strain engineering prolongs photogenerated carriers' lifetime and accelerates their transport. The coupling effect of these three mechanisms enables the device to exhibit high photodetection performance. The constructed α-In 2 Se 3 device manifests a high responsivity of 9.4 × 10 3 A W −1 , detectivity of 5.5 × 10 13 Jones while maintaining fast rise/decay time of 2.7/3.8 ms. In addition, this proposed strategy can also be employed to construct InSe device with comprehensively enhanced photodetection performance, which presents universality and wide applicability. These results demonstrate that advanced device design is an effective avenue to achieve future multifunctional optoelectronic devices with high sensitivity.

show abstract

High-gain InGaAsP-InP heterojunction phototransistors

Cited by 47 publications

References 14 publications

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain

Planar-integrated single-crystalline perovskite photodetectors

Optical Resonance Coupled with Electronic Structure Engineering toward High‐Sensitivity Photodetectors

Contact Info

Product

Resources

About

High-gain InGaAsP-InP heterojunction phototransistors

Cited by 47 publications

References 14 publications

Ultrafast Monolayer In/Gr-WS2-Gr Hybrid Photodetectors with High Gain

Ultrafast Monolayer In/Gr-WS2-Gr Hybrid Photodetectors with High Gain

Planar-integrated single-crystalline perovskite photodetectors

Optical Resonance Coupled with Electronic Structure Engineering toward High‐Sensitivity Photodetectors

Contact Info

Product

Resources

About

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain

Ultrafast Monolayer In/Gr-WS₂-Gr Hybrid Photodetectors with High Gain