High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064 nm Laser Pulses

Shi, Wei; Zhang, Xianbin; Li, Qi; Er-Zhu, Chen; Zhao, Wei

doi:10.1088/0256-307x/19/3/320

Cited by 9 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The laser with a wavelength of 1064 nm, a pulse width of 10 ns and an optical energy of 4.7 mJ was used. The dominant factor in the ability of semi-insulated GaAs to absorb 1064 nm optical pulses and generate photo-generated carriers is due to its internal EL2 deep level and two-photon absorption [12], [13], [14]. The load resistance used in the experiment is 300 .…”

Section: B the Test Circuitmentioning

confidence: 99%

Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

Wu¹,

Shi²

2023

IEEE Access

View full text Add to dashboard Cite

In this paper, the output electric pulse characteristics of gallium arsenide photoconductive semiconductor switch (GaAs PCSS) with bias voltage of 20 kV and pulse width of about 100 ns are studied. By designing the reflection and transmission optical paths, the absorption rate of the trigger optical of the GaAs PCSS at a wavelength of 1064 nm was measured to be 24.8%. When the bias voltage is 16 kV-20 kV, the avalanche multiplication rates of carriers are calculated respectively. The relationship between the output current waveform and the residual charge in the energy storage capacitor is analyzed when the bias voltage is 20 kV. And the trend of GaAs PCSS electric field intensity and current waveform change with time. This research will be helpful for the application design of GaAs PCSS under the nonlinear mode with special requirements, and has important significance for the application of frontier science.INDEX TERMS Gallium arsenide photoconductive semiconductor switch (GaAs PCSS), nonlinear mode, output characteristics.

show abstract

Section: B the Test Circuitmentioning

confidence: 99%

Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

Wu¹,

Shi²

2023

IEEE Access

View full text Add to dashboard Cite

show abstract

“…The photoconductive semiconductor switches (PCSS) is a new type of photoconductive device that was developed with a combination of ultra-fast pulse laser and photoconductor techniques [1,2] . It has many advantages, such as fast response to laser pulse, low jitter, GHz repetition rate, small size, small parasitic inductance and capacitance, so that it is widely used in ultra-fast electronics, ultra-fast and high power electrical pulse generation, high-speed detectors, etc [3] .…”

Section: Introductionmentioning

confidence: 99%

Fiber-Optically Triggered Four Parallel GaAs Photoconductive Semiconductor Switches

Shi¹,

Xue²,

Li³

et al. 2011

Plasma Sci. Technol.

View full text Add to dashboard Cite

Four parallel GaAs photoconductive semiconductor switches (PCSSs) were triggered simultaneously by four 1064 nm laser beams. The transient characteristics of four linear electrical pulses were investigated. When the energy of four laser beams were 16.4 mJ, 15.6 mJ, 15.3 mJ, and 13.7 mJ, respectively, four stable electrical pulses of about 25 ns width and 10 ns rise time were obtained at the same bias voltage of 8 kV. The maximum switching voltage amplitude was 3.8 kV. With the triggering pulse energy and bias voltage kept constant, the three GaAs PCSSs were triggered at 10 Hz laser pulse. The method of synchronization calculation was given, and the synchronization of four parallel GaAs PCSSs was calculated to be 79 ps. The influence of bias voltage and laser energy on the voltage amplitude of electrical pulse was analyzed. Furthermore, relationship between the synchronization and the jitter time was also discussed.

show abstract

“…GaAs photoconductive switch is very popular in the realm of high power microwave, broadband radar, Terahertz waves generators and so on [1][2] , for its nice-features such as quick response speed, broad band, optoelectronic isolation, simple structure [3][4][5] . Laser optoelectronic damage in various degrees may happen to change the qualities of switch material and affect the capability and life time of the switch, since the photoconductive switch often works in environments with high voltage, big current and trigger light pulse at high repetition rate.…”

Section: Introductionmentioning

confidence: 99%

Discussion of damage induced by trigger light pulse at high repetition frequencies in semi-insulating GaAs PCSS's materials

2010

View full text Add to dashboard Cite

Based on the analysis of temperature field generated when semi-insulating GaAs photoconductive switch irradiated by light pulse, the paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials. On the basis of the thermal conduction theory, the transient temperature field in the materials is simulated in a computer by using the finite difference method, the main reasons of damage induced by laser in chip material are analyzed according to simulation results and experimental results of the damage test, and the damage mechanism is discussed.

show abstract

High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064 nm Laser Pulses

Cited by 9 publications

References 8 publications

Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

Fiber-Optically Triggered Four Parallel GaAs Photoconductive Semiconductor Switches

Discussion of damage induced by trigger light pulse at high repetition frequencies in semi-insulating GaAs PCSS's materials

Contact Info

Product

Resources

About