High-gain low-excess-noise MWIR detection with a 3.5-<i>µ</i>m cutoff AlInAsSb-based separate absorption, charge, and multiplication avalanche photodiode

Dadey, Adam A.; McArthur, J. Andrew; Kamboj, Abhilasha; Bank, Seth R.; Wasserman, D.; Campbell, Joe C.

doi:10.1063/5.0136918

Cited by 7 publications

(3 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…InAs, which has a comparable optical c commonly limited to low-gain operation (M < 50), even when cooled to 77 K [28 the same illumination wavelength, an EQE of 65% at the punch-through voltage an anti-reflection coating was observed. The cutoff wavelength was extended further into the MWIR by decreasing the Al concentration in the absorber to 0.15 [30]. Under 2 µm illumination at 100 K, these APDs exhibited gains over 850.…”

Section: Alxin1-xasysb1-y Separate Absorption Charge and Multiplicati...mentioning

confidence: 99%

See 1 more Smart Citation

Sb-Based Low-Noise Avalanche Photodiodes

2023

Self Cite

View full text Add to dashboard Cite

Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noise of photodetectors that do not have internal gain. As a result, a detector that provides signal gain can achieve higher sensitivity. This is accomplished by increasing the photodetector gain until the noise associated with the gain mechanism is comparable to that of the output electrical circuit. For avalanche photodiodes (APDs), the noise that arises from the gain mechanism, impact ionization, increases with gain and depends on the material from which the APD is fabricated. Si APDs have established the state-of-the-art for low-noise gain for the past five decades. Recently, APDs fabricated from two Sb-based III-V compound quaternary materials, AlxIn1-xAsySb1-y and AlxGa1-xAsySb1-y, have achieved noise characteristics comparable to those of Si APDs with the added benefit that they can operate in the short-wave infrared (SWIR) and extended SWIR spectral regions. This paper describes the materials and device characteristics of these APDs and their performance in different spectral regions.

show abstract

Section: Alxin1-xasysb1-y Separate Absorption Charge and Multiplicati...mentioning

confidence: 99%

“…Additionally, a selected HgCdTe-based structure [31] is included for comparison. The cutoff wavelength was extended further into the MWIR by decreasing the Al concentration in the absorber to 0.15 [30]. Under 2 µm illumination at 100 K, these APDs exhibited gains over 850.…”

Section: Alxin1-xasysb1-y Separate Absorption Charge and Multiplicati...mentioning

confidence: 99%

Sb-Based Low-Noise Avalanche Photodiodes

2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…In 2022, the unit also reported the SACM APD structure with an optical cutoff wavelength of 3 µm, which achieved low-light signal detection near mid-wave infrared at an operating temperature of 240 K [9]. Further, in 2023, the laboratory adopted a four-element alloy with an Al group of 0.05 as the detection material, with an external quantum efficiency of 24% (0.58 A/W) at 100 K and 3 µm [10].…”

Section: Introductionmentioning

confidence: 99%

Interface Engineering and Electron-Hole Wave Function Overlap of InAs/AlSb Superlattice Infrared Detectors

Yu,

Zhu,

et al. 2023

Photonics

View full text Add to dashboard Cite

InAs/AlSb is a material system that can be used as a low-noise avalanche detector and operates in the short-wave infrared band. The interface parameters determine the wave function overlap (WFO). Maximizing the WFO of InAs/AlSb superlattices improves the quantum efficiency (QE) of infrared avalanche photodetectors (APDs). However, this remains a huge challenge. Here, the 8-band k·p perturbation method based on Bloch wave envelope function approximation was used to calculate the energy level structure of InAs/AlSb superlattices. The results indicate that the WFO is enhanced with increasing InSb interface thickness or when the InSb (or AlAs) interface is far from the intersection of InAs and AlSb. As the AlAs interface thickness increases, the WFO enhances and then reduces. The maximum increase in WFO is 15.7%, 93%, and 156.8%, respectively, with three different models. Based on the stress equilibrium condition, we consider the interface engineering scheme proposed for enhancing WFO with an increase of 16%, 114%, and 159.5%, respectively. Moreover, the absorption wavelength shift is less than ±0.1 μm. Therefore, the interface layer thickness and position can be designed to enhance the WFO without sacrificing other properties, thereby improving the QE of the device. It provides a new idea for the material epitaxy of APDs.

show abstract

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

Cheng,

Shen,

et al. 2024

Electron

View full text Add to dashboard Cite

Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high‐performance type‐II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection.

show abstract

High-gain low-excess-noise MWIR detection with a 3.5-µm cutoff AlInAsSb-based separate absorption, charge, and multiplication avalanche photodiode

Cited by 7 publications

References 27 publications

Sb-Based Low-Noise Avalanche Photodiodes

Sb-Based Low-Noise Avalanche Photodiodes

Interface Engineering and Electron-Hole Wave Function Overlap of InAs/AlSb Superlattice Infrared Detectors

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

Contact Info

Product

Resources

About