High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure

Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.

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“…The maximum avalanche gain reaches 6.8 × 10 4 in the avalanche region. This value is comparable to other previous reported APDs. ,− …”

Section: Resultssupporting

confidence: 92%

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Wang

Cao³

et al. 2021

ACS Nano

106

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Influence of Annealing Temperature Modulation on the Structural and Optical Properties of ZnSe Thin Films

Yuan

Liu

et al. 2021

Crystal Research and Technology

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The research work is devoted to study the influence of annealing temperature on the structural and optical properties of ZnSe thin films. The samples are prepared by a thermal evaporation technique and part of the as-deposited films are annealed. X-ray diffraction patterns and Raman spectra analysis reveal that the ZnSe thin films have cubic zinc-blende crystal structure and the crystallinity increases as the annealing temperature increases. For the linear optical parameters, the absorption edge moves to shorter wavelengths with the increase of annealing temperature. Based on Swanepoel's method, the refractive index, film thickness, absorption coefficient and optical band gap are determined. The values of band gap are found to increase from 2.63 to 2.68 eV as the annealing temperature increases. By performing an open aperture Z-scan technique with femtosecond pulses under 800 nm wavelength, all ZnSe samples show two-photon absorption responses. It is found that the modulation depth and the two-photon absorption coefficient decrease with increasing annealing temperature. Moreover, all samples exhibit better optical limiting responses at higher incident power intensities. These novel properties render this a promising material for traditional optoelectronic devices and optical limiters.

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ZnSe-Based Photodetectors

Korotcenkov

2023

Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

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High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure

Cited by 4 publications

References 20 publications

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Influence of Annealing Temperature Modulation on the Structural and Optical Properties of ZnSe Thin Films

ZnSe-Based Photodetectors

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High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure

Cited by 4 publications

References 20 publications

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Influence of Annealing Temperature Modulation on the Structural and Optical Properties of ZnSe Thin Films

ZnSe-Based Photodetectors

Contact Info

Product

Resources

About

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga₂O₃-Based Heterojunction