High-grade efficiency III-nitrides semiconductor solar cell

Anani, M.; Mathieu, C.; Khadraoui, M.; Chama, Zouaouia; Lebid, Sara; Amar, Youcef

doi:10.1016/j.mejo.2008.06.008

Cited by 9 publications

(2 citation statements)

References 13 publications

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“…The band gap of the In x Ga 1-x N layers can be calculated using Eq. ( 1) [12]. Calculations showed that all III-Nitride materials in the wurtzite phase have a direct band-gap.…”

Section: Relationships and Parameters Of In X Ga 1-x N Materialmentioning

confidence: 99%

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Annab,

Baghdadli,

Mamoun

et al. 2023

JOR

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InxGa1-xN, as one promising nitride semiconductor alloys for modern optoelectronic devices, has received extensive attention in recent years. However, due to its powerful modulation of energy band gap from UV to visible spectra (0.7-3.4 eV) and its interesting absorption coefficient can range from 103 to 105 cm-1 , depending on the material properties, it can be considered as a potential candidate for high efficiency solar cells. The actual efficiency reached is (30.38%) [1]. In order to enhance more the efficiency, we perform in this work, a device modeling and numerical simulation using SCAPS software. We optimize the photovoltaic characteristics of a solar cell based on InxGa1-xN. This cell is mainly composed of indium gallium nitride semiconductors for both buffer and active layer p-InxGa1-xN/i-InxGa1-xN and the window layer contains of n-ZnO. The optimization of the various optoelectronic parameters allows improving performance of the solar cell, in addition to absorbing as much solar radiation as possible. The main photovoltaic parameters of the analog device: open circuit voltage, short circuit current density, fill factor and conversion efficiency (η) were compared and analyzed. We have reached the conversion efficiency of 26.11% for a thickness of 1450 nm and an n-doping of 3×1018 cm-3 in the active layer (In0.3Ga0.7N). This study investigates the great potential of InGaN solar cells and can be used for the design and manufacture of high efficiency III-nitride based solar cells.

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“…The band gap of the In x Ga 1-x N layers can be calculated using Eq. ( 1) [12]. Calculations showed that all III-Nitride materials in the wurtzite phase have a direct band-gap.…”

Section: Relationships and Parameters Of In X Ga 1-x N Materialmentioning

confidence: 99%

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Annab,

Baghdadli,

Mamoun

et al. 2023

JOR

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“…InGaN/GaN two‐dimensional quantum well (QW) superlattices have been intensively studied as materials for visible and ultraviolet light emission and detection . They are also investigated in view of photovoltaic conversion . However, the performance of InGaN devices is negatively affected by the presence of a large number of threading dislocations and by a strong internal polarization field in c‐oriented thin films .…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

Zhang

Messanvi

Durand

et al. 2016

Phys. Status Solidi A

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International audienceWe report on the fabrication and characterization of single nitride nanowire visible-to-ultraviolet p-n photodetec-tors. Nitride nanowires containing 30 InGaN/GaN radial quantum wells with 18% indium fraction were grown by catalyst-free metal-organic vapour phase epitaxy. Single nanowires were contacted using optical lithography. As expected for a radial p-n junction, the current-voltage (I-V) curves of single wire detectors show a rectifying behavior in the dark and a photocurrent under illumination. The detectors present a response in the visible to UV spectral range starting from 2.8 eV. The peak responsivity is 0.17 A/W at 3.36 eV. The on-off switching time under square light pulses is found to be below 0.1 sec

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