High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Chen, Yingda; Wu, Hualong; Han, Enze; Yue, Guoqiang; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

doi:10.1063/1.4919005

Cited by 98 publications

(61 citation statements)

References 20 publications

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“…Technological advances in crystal growth showed that problems like the solubility limit, hydrogen passivation, and high defect ionization energies, hampering p-type conduction, can be overcome to some extent. [5][6][7] Doping by ion implantation offers several advantages over doping during growth especially for selective area doping as reported by Tadjer et al 8 Furthermore, the present generation of "white" LEDs, using a phosphor, suffers from efficiency problems. Recently, Lim et al proposed a phosphor-free white LED based on threedimensional gallium nitride structures.…”

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confidence: 98%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

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Al x Ga 1-x N (x ¼ 0.15 and 0.77) films, grown by halide vapor phase epitaxy, were implanted with 300 keV Tm ions. Implantation damage accumulation is investigated with Rutherford backscattering spectrometry/channeling (RBS/C), transmission electron microscopy (TEM), and high resolution X-ray diffraction (XRD). Distinct damage behavior for samples with different AlN contents was found. Surface nanocrystallization occurs for samples with x ¼ 0.15, similar to implantation effects observed in GaN. Samples with x ¼ 0.77 approach the behavior of AlN. In particular, surface nanocrystallization is suppressed and the depth range of the stacking fault network, typical for implanted III-nitrides, is decreased. The crystalline quality of the sample with x ¼ 0.15 was investigated to compare random and channeled implantation, showing less concentration of damage but with a higher range for channeled implantation. Surprisingly, the strain field caused by the implantation reaches much deeper into the sample than the defect profiles measured by RBS/C and TEM. This is attributed to the fact that XRD is much more sensitive to low defect densities caused by ions which are channeled to deep regions of the sample. Published by AIP Publishing.

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confidence: 98%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

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“…Therefore, numerous efforts have been undertaken to mitigate compensation by decreasing donor defects and increasing solubility of the dopants, increasing the hole mobility by reducing the scattering rate, and increasing the acceptor activation rate by reducing the activation energy through polarization field. The approaches include co-doping of Mg with Si or oxygen [102,103], Mg delta-doping [104,105], and Mg-doped AlxGa1-xN/AlN superlattice or AlxGa1-xN/AlyGa1-yN superlattice [106,107]. Some of the reports on the achievement of low p-type resistivities in high Al-molar fraction AlGaN are overviewed below.…”

Section: Doping Considerations In High Al-molar Fraction Alganmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…Therefore, numerous efforts have been undertaken to mitigate compensation by decreasing donor defects and increasing solubility of the dopants, increase the hole mobility by reducing the scattering rate, and increase the acceptor activation rate by reducing the activation energy through polarization field. The approaches include co-doping of Mg with Si or oxygen, [94,95] Mg delta-doping, [96,97] and Mg-doped AlxGa1-xN/AlN superlattice or AlxGa1-xN/AlyGa1-yN superlattice. [98,99] Some of the reports on the achievement of low p-type resistivities in high Al-molar fraction AlGaN are overviewed below.…”

Section: Doping Considerations In High Al-molar Fraction Alganmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Cited by 98 publications

References 20 publications

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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