High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Arakawa, Yasuaki; Ueno, K.; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

doi:10.1063/1.4960485

APL Mater.

2016

DOI: 10.1063/1.4960485

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Yasuaki Arakawa

K. Ueno

Atsushi Kobayashi

et al.

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Cited by 66 publications

(51 citation statements)

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“…The doping concentration was controlled by varying the dopant vapor flux from the solid state source. 12 surface reconstruction indicated that the surface polarity of this film was N-polarity. 19 An AFM surface image of the GaN (0001) film in Fig.…”

mentioning

confidence: 95%

“…11 In fact, high-quality n-type and p-type GaN with room-temperature (RT) carrier mobilities of 1008 cm 2 V 1 s 1 and 34 cm 2 V 1 s 1 , respectively, 12 have already been prepared, and various devices such as light-emitting diodes (LEDs), 13,14 solar cells, high-electron mobility transistors, 15 and metal-insulator semiconductor field-effect transistors 16 were fabricated via PSD. The PSD growth mechanism involves the enhanced surface migration of film precursors from the pulsed-supplied group-III metals.…”

mentioning

confidence: 99%

“…We have demonstrated that the growth mechanisms of PSD are inherently different from those behind the MOCVD growth, enabling the growth of high-quality nitride films at considerably lower growth temperatures owing to the enhanced surface migration of adatoms on the growth surfaces. [11][12][13][14][15][16][17] These features are also expected to facilitate the growth of high-quality N-polar nitride films because surface roughening in N-polar growth is probably caused by the insufficient surface migration of growth precursors.…”

mentioning

confidence: 99%

“…The fact that PSD gives as-grown p-type materials can be explained by the absence of hydrogen atoms in the growth ambient. 12 Figure 3(a) summarizes the relationship between the RT hole concentration and mobility of the Mg-doped samples, estimated from the Hall measurements with a van der Pauw configuration at RT. As the hole concentration increased from 8 × 10 16 to 2 × 10 18 cm 3 , the mobility decreased from 9 to 2 cm 2 V 1 s 1 .…”

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N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

et al. 2017

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High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

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confidence: 95%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

et al. 2017

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“…The use of PSD enables the growth of device-quality group-iii nitrides at much lower temperatures than those used in the conventional MOCVD process. [6][7][8][9][10][11] PSD is suitable for growing heavily impurity-doped GaN because of its highly nonequilibrium nature. In fact, heavily Si-doped GaN prepared by PSD exhibited a RT electron 13 These achievements in the growth of highly conductive, heavily doped n-type GaN provide a good opportunity for systematically investigating the transport properties of degenerate GaN.…”

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confidence: 99%

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

et al. 2017

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We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

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AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Krishna

Raj

Hatui

et al. 2019

Physica Status Solidi (a)

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To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first ptype field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopant. A sheet resistance of 11.6 kΩ/■, and a contact resistance of 14.9 Ω.mm was determined using transmission line measurements (TLM) for a Mg doping of 1.5 × 10 19 cm -3 of Mg. Mobilities in the range of 7−10 cm 2 /Vs and a total sheet charge density in the range of 1 × 10 13 -6 × 10 13 cm -2 were measured using room temperature Hall effect measurements. Without Tetramethylammonium hydroxide (TMAH) treatment, the fabricated pFETs had a maximum drain-source current (IDS) of 3mA/mm and an On-Resistance (RON) of 3.48 kΩ.mm, and did not turn-off completely. With TMAH treatment during fabrication, a maximum IDS of 4.5mA/mm, RON of 2.2kΩ.mm, and five orders of current modulation was demonstrated, which is the highest achieved for a p-type transistor based on (Al,Ga)N. AlGaN/GaN superlattice (SL). MOCVD growth technique was used magnesium was used as the p-type dopant. With Tetramethylammonium hydroxide (TMAH) treatment during fabrication, a maximum IDS of 4.5mA/mm, RON of 2.2kΩ.mm, and five orders of current modulation was demonstrated.

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Cited by 66 publications

References 23 publications

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

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