High‐
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            Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

Lu, Xubing

doi:10.1002/9783527646340.ch15

Cited by 10 publications

(1 citation statement)

References 56 publications

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“…The Fe-Si interface suffers from ferroelectric-silicon interdiffusion and reaction, unwanted oxide layer formation, and fatigue upon the processing. To mitigate these undesirable effects, it was proposed to use a thermodynamically stable insulating buffer layer sandwiched between ferroelectric and silicon (Lu, 2012). Different insulating oxide layers such as SiO 2 , Si 3 N 4 and Al 2 O 3 were widely investigated for metal/ferroelectric/insulator/silicon (MFeIS)-FET applications in the past few decades and a significant improvement in the electrical and ferroelectric properties have been observed (Singh et al , 2017; Singh et al , 2018a, 2018b).…”

Section: Introductionmentioning

confidence: 99%

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Singh

Jha

Goswami

et al. 2020

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Purpose The purpose of this paper is to investigate the effect of high-k material HfO2 as a buffer layer for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Design/methodology/approach RF-sputtered Pb[Zr0.35Ti0.65]O3 or (PZT) and plasma-enhanced atomic layer deposited HfO2 films were selected as the ferroelectric and high-k buffer layer, respectively, for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si (100) substrate. Multiple angle ellipsometry and X-ray diffraction analysis was carried out to obtain the crystal orientation, refractive index and absorption coefficient parameters of the deposited/annealed films. In the different range of annealing temperature, the refractive index was observed in the range of 2.9 to 2 and 1.86 to 2.64 for the PZT and HfO2 films, respectively Findings Electrical and ferroelectric properties of the dielectric and ferroelectric films and their stacks were obtained by fabricating the metal/ferroelectric/silicon (MFeS), metal/ferroelectric/metal, metal/insulator/silicon and MFeIS capacitor structures. A closed hysteresis loop with remnant polarization of 4.6 µC/cm2 and coercive voltage of 2.1 V was observed in the PZT film annealed at 5000 C. Introduction of HfO2 buffer layer (10 nm) improves the memory window from 5.12 V in MFeS to 6.4 V in MFeIS structure with one order reduction in the leakage current density. The same MFeS device was found having excellent fatigue resistance property for greater than 1010 read/write cycles and data retention time more than 3 h. Originality/value The MFeIS structure has been fabricated with constant PZT thickness and varied buffer layer (HfO2) thickness. Electrical characteristics shows the improved leakage current and memory window in the MFeIS structures as compared to the MFeS structures. Optimized MFeIS structure with 10-nm buffer layer shows the excellent ferroelectric properties with endurance greater than E10 read/write cycles and data retention time higher than 3 h. The above properties indicate the MFe(100 nm)I(10 nm)S gate stack as a potential candidate for the FeFET-based nonvolatile memory applications.

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Section: Introductionmentioning

confidence: 99%

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Singh

Jha

Goswami

et al. 2020

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Comparative Study on Structural and Electrical Characteristics of TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering

Jha

Singh

Goswami

et al. 2019

Lecture Notes in Electrical Engineering

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Memory improvement in lead-free BiFeO3 ferroelectric with high-k Al2O3 buffer layer for non-volatile memory applications

Pandey¹

2018

Appl. Phys. A

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High‐ k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

Cited by 10 publications

References 56 publications

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Comparative Study on Structural and Electrical Characteristics of TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering

Memory improvement in lead-free BiFeO3 ferroelectric with high-k Al2O3 buffer layer for non-volatile memory applications

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High‐ k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

Cited by 10 publications

References 56 publications

Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate

Integration of perovskite Pb[Zr0.35Ti0.65]O3/HfO2 ferroelectric-dielectric composite film on Si substrate

Comparative Study on Structural and Electrical Characteristics of TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering

Memory improvement in lead-free BiFeO3 ferroelectric with high-k Al2O3 buffer layer for non-volatile memory applications

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Product

Resources

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Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate

Integration of perovskite Pb[Zr_0.35Ti_0.65]O₃/HfO₂ ferroelectric-dielectric composite film on Si substrate