High-
 k
 perovskite gate oxide for modulation beyond 10
 14
 cm
 −2

Song, Dowon; Jeong, Minwoo; Kim, Juhan; Kim, Bongju; Kim, Jae Ha; Kim, Jae Hoon; Lee, K. Y.; Kim, Yongsung; Char, K.

doi:10.1126/sciadv.abm3962

Cited by 8 publications

(7 citation statements)

References 52 publications

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“…Compared to other dielectrics, the CB offset of SHO to BSO is 2-3 times larger than other materials, which is believed to be the main cause for the low leakage current density. As mentioned in our previous paper, [44] the electron affinity of Si (4.05 eV) [7] is similar to the work function of 4% BLSO (≈4 eV). Therefore, large CB offset of about 2.8 eV between silicon and SHO is expected, which would result in very low leakage current, as experimentally reported.…”

Section: Dielectric Propertiessupporting

confidence: 78%

“…Furthermore, we investigated dielectric properties of SrHfO 3 in metal-insulatormetal (MIM) structure and demonstrated a field-effect transistor (FET) with ultralow leakage current. Figure 1 shows the leakage current density versus dielectric constant of many oxides including SHO, [19][20][21]26,44,[46][47][48][49][50][51][52][53][54] displaying the unique role of SHO can play in the class of dielectric materials for semiconducting devices.…”

Section: Introductionmentioning

confidence: 99%

“…[ 42 ] Furthermore, a dielectric material BaHf 0.6 Ti 0.4 O 3 (BHTO) which possesses large dielectric constant (≈150) and low leakage current density (10 −4 A cm −2 at 2 MV cm −1 ) simultaneously by alloying titanates and hafnates has been reported recently. [ 44 ]…”

Section: Introductionmentioning

confidence: 99%

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Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Kim

Song

Yun

et al. 2023

Adv Elect Materials

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of high-k gate oxide. The power consumption of the device can be categorized by two distinct origins, which are static and dynamic power consumption. [1] As the geometries of the devices are getting smaller, the static power consumption begins to dominate, which is intimately correlated with the leakage current in the devices. [1][2][3][4] Furthermore, the leakage current in off-state is important for device reliability as the on-state currents shrink along with scaling down of the device size. Since the high-k dielectric is needed to overcome the leakage current issue of silicon oxides, [5][6][7] the requirements for the ideal high-k materials are large dielectric constant, low leakage current, and large breakdown field. Especially, in order for the high-k dielectric to carry low leakage current, large bandgap (>5 eV), large conduction band offset (CB offset > 1 eV), and low density of the defect states inside the bandgap which may create a conduction path are necessary conditions. [8,9] In this direction binary oxides with large bandgaps such as Y 2 O 3 and Al 2 O 3 were investigated. [5] However, their dielectric constants have not been sufficiently high. Binary oxides such as TiO 2 and Ta 2 O 5 are high-k material but they were found to be not stable on silicon. [5] Other binary oxides such as HfO 2 , ZrO 2 , and La 2 O 3 are suitable high-k materials on silicon and commercial products using those materials are already in the semiconductor market for central processing unit, dynamic random access Reducing the leakage current through the gate oxide is becoming increasingly important for power consumption reduction as well as reliability in integrated circuits as the semiconducting devices continue to scale down. Here, this work reports on the high-k dielectric SrHfO 3 (SHO) based devices with ultralow leakage current density via pulsed laser deposition (PLD). The ultralow current density is achieved by optimizing the growth conditions and the associated structural properties. In the optimized conditions, the dielectric properties of the 50-nm-thick SHO capacitors are measured: high dielectric constant (κ = 32), low leakage current density (<10 −8 A cm −2 at 2 MV cm −1 ), and large breakdown field (E BD > 4 MV cm −1 ). The surprisingly low leakage current density of SHO is ascribed to the large bandgap (≈6 eV), the large conduction band offset (CB offset > 3 eV) with respect to the semiconductor, and the low density of defect states inside the bandgap. The optimized SHO dielectric with high dielectric constant and ultralow leakage current density is proposed for future low-power consumption devices based on Si as well as perovskite oxide semiconductors.

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Section: Dielectric Propertiessupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Kim

Song

Yun

et al. 2023

Adv Elect Materials

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“…However, due to the concurrent reduction input voltage, the thickness of the insulating layer must also be reduced. Consequently, because a very thin insulating layer causes leakage current and adversely affects device performance, an insulating layer with a high dielectric constant (κ) has become an important requirement for MOSFETs and metal-insulator-metal (MIM) capacitors for application in memory devices [5][6][7]. In particular, the ternary perovskite barium tin oxide (BaTiO 3 or BTO) has attracted attention as a next-generation insulator due to its high κ value of ∼1,700 compared to the binary oxides such as SiO 2 (κ = 3.9) and ZrO 2 (κ = 2.9) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Plasma etching and surface characteristics depending on the crystallinity of the BaTiO₃ thin film

Lee

Joo

Patil

et al. 2023

Mater. Res. Express

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Due to its high dielectric constant (κ), the BaTiO3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film etching process is required for such nanoscale device applications. Herein, the etching characteristics and surface properties are examined according to the crystallinity of the BTO thin film. The results demonstrate that the etching rate is low in the high-crystallinity thin film, and the surface residues are much lower than in the low-crystallinity thin film. In particular, the accelerated Cl radicals in the plasma are shown to penetrate more easily into the low-crystallinity thin film than the high-crystallinity thin film. After the etching process, the surface roughness is significantly lower in the high-crystallinity thin film than in the low-crystallinity thin film. This result is expected to provide useful information for the process design of high-performance electronic devices.

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“…In recent years, metal-halide perovskites have emerged as promising materials for optoelectronic applications owing to their superior optoelectrical properties. As a photoactive layer, it has been extensively studied in photodetection in terms of photo conductors, [1,2] photodiodes [3] or phototransistors, [4,5] showing low dark current, fast response speed, large linear dynamic range (LDR), and good linearity. [6][7][8][9][10][11] Because of its superior performance, there is increasing interest in fabricating integrated perovskite photodetector arrays for imaging.…”

Section: Introductionmentioning

confidence: 99%

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging

et al. 2022

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the Sn-Pb-based perovskite photodiodes were spin deposited onto the drain electrode of indium gallium zinc oxide (IGZO) TFTs. [16] The array showed visible to near-infrared imaging ability with a response speed of 52 ms, dark current of 1.04 × 10 −7 A and I photo /I dark of 5.06 × 10 2 . Albert et al. further demonstrated a flexible sensor array of 640 × 480 pixels for biometric fingerprinting. The device showed dark current as low as 9.7 × 10 −7 mA cm −2 and a faster response speed of 2.7 µs. [18] Deumel et al. showed the integration of single crystal MAPbI 3 on TFT for X-ray imaging with a low detection limit of 6.3 nGy air s −1 . [20] These great advances have brought the perovskite photodetector array closer to practical application. However, the difficulty of these methods is the device complexity and combination of the preparation processes of both devices, which require sophisticated micro/nanofabrication. Furthermore, the photodetector in the sensor array suffers a significant performance loss, for example, reduced on/off ratio and LDR, due to the electrical mismatch. [18] A simpler approach is to fabricate a crossbar array with the photodetectors sandwiched between cross electrodes. This crossbar array offers the highest integration density and is widely used in imaging sensors and memristor arrays. [21][22][23][24][25] A pixel in a crossbar array is usually composed of a photodiode or photoconductor type photodetector. In many research, it is imaged using a mask or a light spot with the selected pixel at a high bias voltage, while the unselected pixels are at 0 V or in a floating state. [22,26,27] This offers a contrast between the illuminated and unilluminated pixels. However, the photodiode With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode-blocking diode (PIN-BD) crossbar array with pixel-wise rectifying property by the vapor deposition method is presented. The PIN-BD shows a large rectification ratio of 3.3 × 10 2 under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real-time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.

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High- k perovskite gate oxide for modulation beyond 10 ¹⁴ cm ⁻²

Cited by 8 publications

References 52 publications

Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Plasma etching and surface characteristics depending on the crystallinity of the BaTiO₃ thin film

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging

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High- k perovskite gate oxide for modulation beyond 10 14 cm −2

Cited by 8 publications

References 52 publications

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3

Plasma etching and surface characteristics depending on the crystallinity of the BaTiO3 thin film

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging

Contact Info

Product

Resources

About

High- k perovskite gate oxide for modulation beyond 10 ¹⁴ cm ⁻²

Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Low Leakage in High‐k Perovskite Gate Oxide SrHfO₃

Plasma etching and surface characteristics depending on the crystallinity of the BaTiO₃ thin film