High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Abstract

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (11-20) a-plane In0.17Ga0.83N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of InxGa1−xN alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

“…It is noteworthy that the architectures of photodetectors rely on the desired designs for various applications. This includes applications from basic electronics such as detectors and optical data storage devices towards more sophisticated applications such as semiconductor photodetectors for industry and safety and environmental monitoring [9,10,30,53]. This section discusses several important factors, such as epitaxially grown structures and the fabrication processes that played important roles in the novel design of non-polar GaN-based photodetector devices [3,9,30].…”

“…This approach was introduced using a commercially cheap r-plane sapphire substrate to promote laterally grown GaN devices along the non-polar orientation (1120). Another simple yet remarkable example using a non-conventional direction along the non-polar direction was the effect of using a highrelated indium content [53]. The structures of non-polar (1120) a-plane InGaN epilayers grown on 200 nm GaN/Al 2 O 3 (1102) substrate were obtained.…”

“…The designs of the photodetectors were categorized into four types of geometry, namely, MSM semiconductor, p-n junction, p-i-n junction, and hybrid-type geometry, as shown in Figure 4 [1,[52][53][54]. Due to its straightforward process, MSM geometry has been considered a popular geometry choice, especially in UV photodetectors that are fabricated on epitaxial GaN nanostructures [56].…”

“…The mechanisms of the screw or mixed dislocation, edge dislocation, and BSF densities that affected the dark current, responsivity, and response time of GaN (112 0)-based photodetectors were discussed. Another simple yet remarkable approach using a non-conventional direction along the nonpolar a-direction was the effect of consuming a highly related indium content [53]. The Due to its straightforward process, MSM geometry has been considered a popular geometry choice, especially in UV photodetectors that are fabricated on epitaxial GaN nanostructures [56].…”

Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings

“…However, many previous experimental and theoretical studies have shown that the incorporation of greater indium content in the InGaN layer results in low crystal quality due to solid phase immiscibility between GaN and InN, and this results in phase separation in the InGaN alloy . On the other hand, many recent reports have demonstrated the growth of single‐crystalline indium‐rich InGaN alloys without phase separation by lowering the growth temperature and controlling the pressure …”