High intensity magnetic fields for the identification and study of donors in epitaxial gallium arsenide

Afsar, M.N.; Button, Kenneth; McCoy, G. L.

doi:10.1007/bf01007330

Cited by 9 publications

(1 citation statement)

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“…Because the energy separation E2p + -E1s depends linearly on the magnetic field strength B in the applied range of B, having a slope of d(E2p -Els)/dB ~ 13 cm -I T-I [9], the magnetic field scale may be converted into a wave number scale giving A~ = 0.39 cm -I. This width corresponds to the typical central cell splitting of shallow donors in GaAs [10,11,12] showing that the sample under investigation contained predominantly one chemical donor species only.…”

Section: Theory and Discussionmentioning

confidence: 99%

Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Prettl

Vass

Allan

et al. 1983

Int J Infrared Milli Waves

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The saturation of the photoconductivity due to Is-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N = O conduction band Landau level. In the former case Is-2p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low as 0.84 mW/cm 2, giving an effective lifetime of the 2p+ state of 1.5 ~s. Above the band edge the integrated photoconduetivity does not saturate though the intensity-normalized peak photosignal decreases and the linewidth increases with raising intensity. This strange behaviour is tentatively attributed to optical excitations of 2p+ electrons to higher lying electron Landau states.Key word:semiconductors, epitaxial GaAs, shallow donors, nonlinear photoconductivity, power broadening.

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Section: Theory and Discussionmentioning

confidence: 99%