In this paper, a novel CPW-fed dual-band on-chip antenna (OCA)
by introducing a Crossed Bowtie shaped Defected Ground Structure (CBDGS)
in one of the intermediate layers of the CMOS layout is proposed. In
general, a CPW fed OCA has its ground plane on the same plane of antenna,
however, introducing a DGS in one of the intermediate layer using Through
Silicon Vias (TSVs) to obtain dual band characteristics of antenna as well as
to improve its gain is performed in this work. A 10 dB operating band of 9
GHz (2.25 GHz - 11.75 GHz) is obtained by employing the meandered loop
miniaturization technique on the antenna designed on top CMOS layer, while
the introduction of DGS layer enforced a comparatively less stop band at the
middle of the operating band and the resultant structure offered a dual-band
resonance characteristic at 3.1 GHz and 10.4 GHz. Here, the intermediate
DGS layer between the top-layered antenna and Silicon (Si) wafer reduces
the substrate loss by preventing the coupling of the electromagnetic radiation
with the substrate and enhances the antenna gain significantly at both the
resonance frequencies respectively by +16.01 dB and +12.7 dB. A prototype
of the proposed antenna structure is fabricated and the obtained simulated
result is validated through experimental measurement.