High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Singh, Tejinder; Khaira, Navjot K.

doi:10.1155/2014/605894

Cited by 15 publications

(9 citation statements)

References 11 publications

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“…The dimensions of CPW are specified in Table 1. If C is the capacitance per unit length of line l and C 0 is the capacitance per unit length in the absence of the dielectric layer, then the effective permittivity μ eff for CPW is approximated by using: (9) where; K is the complete elliptical integral of the first kind, and the values of k and k' depend on the geometry configuration of the line and are demonstrated in [11].…”

Section: Equivalent Circuit Modelingmentioning

confidence: 99%

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Computation of Beam Stress and RF Performance of a Thin Film Based Q-Band Optimized RF MEMS Switch

Singh¹

2015

Transactions on Electrical and Electronic Materials

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In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches' reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

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Section: Equivalent Circuit Modelingmentioning

confidence: 99%

“…This paper presents a compact and capacitive/shunt RF MEMS switch for Q-band operation [9]. Being a compact switch, this switch shows prominent performance in the higher frequency region.…”

Section: Introductionmentioning

confidence: 99%

Computation of Beam Stress and RF Performance of a Thin Film Based Q-Band Optimized RF MEMS Switch

Singh¹

2015

Transactions on Electrical and Electronic Materials

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“…CORE TECHNOLOGIES There are many industrial grade tools for simulation depending on the problems. Now-a-days, tools are developed that we can also couple the physics from different domains for analysis [4], [13]. Modeling tools provides an environment for engineers in which they can design, analyse/simulate, compare the results and optimise various factors depending on the type of application [14].…”

Section: Impact Of Research Tools On Education Andmentioning

confidence: 99%

“…RF MEMS switches have huge advantage including; excellent isolation, low insertion loss, negligible power consumption, very compact structure, low cost of manufacturing [20]. But these tiny intelligent devices suffer from reliability issues including stiction and high voltage requirements [13], To overcome these problems, researchers and designers has to model and analyse the issues first and then optimise the design accordingly. In this case study, we have reported that how FEM is useful in estimating the stress gradient to help determining how the membrane of RF MEMS can handle stress for reliable operation [5].…”

Section: Case Study II -Finite Element Modeling For Rf-memsmentioning

confidence: 99%

Modeling Method of Finite Element Modeler and Electromagnetic Solvers for Education and Research in RF MEMS

Singh¹,

Elmedany²,

Rangra

2015

ELS

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Field of electronics engineering is the most captivatingamong students, researchers and academicians now-adays.With the passage of time the requirement of advance toolsfor engineering is increasing. Many institutions and universitiesaround the globe provide quality education to various engineeringdomain. Students although study theory courses but they alsoneed exposure that how theory can be related to actual devices.Simulations play an important role for relating theoretical componentsto the virtual practical environment. Students of RadioFrequency (RF) domain and especially students that are studyingMicroelectromechanical Systems (MEMS) as courses, due to theextreme complexity of these devices, students need multiple toolsto simulate the performance parameters. This paper highlightsthe most prominent tools that are used in the industry to designand implement RF MEMS structures. The role of Electromagnetic(EM) solvers and Finite Element Modeller (FEM) and itsimpact on electronics engineering education is demonstrated.Modeling approach of these tools are also explained. These toolsand due to there huge advantages, electronics graduates shouldstudy these tools in their course curriculum to know how totackle various types of RF problems and through case studies,it is demonstrated that how these tools can aid shift from justtheoretical study to virtual practical environment.

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“…The RF performances for the device in both switching states are extracted by S-parameters. The data of the Smatrix is computed for the 20-100 GHz frequency range [16]. Usually isolation, return loss in OFF state, insertion loss, and return loss in ON state are all required to examine the performance of switch in the RF region.…”

Section: Rf Performance Analysismentioning

confidence: 99%

Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

Singh¹,

Pashaie²

2014

Journal of Computing Science and Engineering

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This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

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High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Cited by 15 publications

References 11 publications

Computation of Beam Stress and RF Performance of a Thin Film Based Q-Band Optimized RF MEMS Switch

Computation of Beam Stress and RF Performance of a Thin Film Based Q-Band Optimized RF MEMS Switch

Modeling Method of Finite Element Modeler and Electromagnetic Solvers for Education and Research in RF MEMS

Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

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