High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

Rigante, Sara

doi:10.5075/epfl-thesis-6134

Cited by 3 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This characteristic provides the advantage of better real-time detection with high specificity and detection sensitivity if compared to other label-free sensors. In the literature, it is reported that this kind of sensor provides mechanical durability and resistance to the environment, making them reliable over time …”

Section: Fully Depleted Ultrathin Body Silicon On Insulator Nanoribbo...mentioning

confidence: 99%

See 1 more Smart Citation

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

et al. 2018

View full text Add to dashboard Cite

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlated to their concentrations in blood, making sweat a trusted biofluid candidate for noninvasive diagnostics. We introduce a fully on-chip integrated wearable sweat sensing system to track biochemical information at the surface of the skin in real time. This system heterogeneously integrates, on a single silicon chip, state-of-the-art ultrathin body (UTB) fully depleted silicon-on-insulator (FD-SOI) ISFET sensors with a biocompatible microfluidic interface, to deliver a “lab-on-skin” sensing platform. A full process for the fabrication of this system is proposed in this work and is demonstrated by standard semiconductor fabrication procedures. The system is capable of collecting small volumes of sweat from the skin of a human and posteriorly passively driving the biofluid, by capillary action, to a set of functionalized ISFETs for analysis of pH level and Na+ and K+ concentrations. Drop-casted ion-sensing membranes on different sets of sensors on the same substrate enable multiparameter analysis on the same chip, with small and controlled cross-sensitivities, whereas a miniaturized quasireference electrodes set a stable analyte potential, avoiding the use of a cumbersome external reference electrode. The progress of lab-on-skin technology reported here can lead to autonomous wearable systems enabling real-time continuous monitoring of sweat composition, with applications ranging from medicine to lifestyle behavioral engineering and sports.

show abstract

Section: Fully Depleted Ultrathin Body Silicon On Insulator Nanoribbo...mentioning

confidence: 99%

“…In the literature, it is reported that this kind of sensor provides mechanical durability and resistance to the environment, making them reliable over time. 25…”

mentioning

confidence: 99%

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Indeed, the DNA strand density directly depends on the silanization efficiency, which in turn depends on the specific amount of hydroxyl groups on the dielectric surface. Moreover, its dielectric constant and surface reactivity have been shown to influence the sensitivity of the sensor in liquid environment [17,18,22,23].…”

Section: Biosensing Operating Mechanismmentioning

confidence: 99%

“…In spite of such varied applications, researchers have also recently reported poor performance of scaled SiO 2 dielectric based SiNW biosensor [15,18]. This is attributed to persistent hysteresis and leakage currents [15,18].…”

Section: Biosensing Operating Mechanismmentioning

confidence: 99%

“…This is termed as the Nernst limit of detection and is attributed to the formation of an electrical double layer (EDL) on the dielectric surface in the liquid environment [17]. Thus, the choice of the dielectric material should be such that it can withstand the maximum temperature during the manufacturing process, have consistent conformal deposition, low leakage current, defects and hysteresis and easy to transfer on the SiNW surface [15,18] without obstructing the electrical access to the probing bond pads. Also, to attain high sensitivity of the sensors, insulators that have high density of OH groups and high dielectric constant are favored [18].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wafer-scale HfO₂ encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

et al. 2019

View full text Add to dashboard Cite

Abatract Silicon nanowire (SiNW) charge based biosensors are attractive for DNA sensing applications due to their compactness and large surface-to-volume ratio. Small feature size, low production cost, repeatability, high sensitivity and selectivity are some of the key requirements for biosensors. The most common e-beam manufacturing method employed to manufacture sub-nm SiNWs is both cost and time intensive. Therefore, we propose a highly reproducible CMOS industry grade low-cost process to fabricate SiNW-based field effect transistors on 4″-wafers. The 60 nm wide SiNWs reported in this paper are fabricated using the sidewall transfer lithography process which is a self-aligned-double-patterning I-line lithography process that also facilitates encapsulation of the SiNW surface with a thin HfO2 layer on which DNA probes are grafted to finalize the biosensors. Upon DNA hybridization, SiNW devices exhibit threshold voltage shift larger than the noise introduced by the exposition to saline solutions used for the bioprocesses. More specifically, based on a statistical analysis, we demonstrate that 85% of the tested devices exhibit a positive threshold voltage shift after DNA hybridization. These promising results make way for the monolithic integration of SiNW biosensors and CMOS circuitry to realize a point of care device which can offer reliable real time electrical readout.

show abstract

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

2018

View full text Add to dashboard Cite

Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very few attempts have been made to integrate SiRi with complementary-metal-oxide-semiconductor (CMOS) circuits to form a complete lab-on-chip (LOC). Integration of SiRi with CMOS will facilitate real time detection of the output signal and provide a compact small sized LOC. Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS field-effect-transistors (FET) for real-time selective multiplexed detection. The SiRi pixels are fabricated on a silicon-on-insulator wafer using a top-down method. Each pixel houses a control FET, fluid-gate (FG) and SiRi sensor. The pixel is controlled by simultaneously applying frontgate (VG) and backgate voltage (VBG). The liquid potential can be monitored using the FG. We report the transfer characteristics (ID-VG) of N- and P-type SiRi pixels. Further, the ID-VG characteristics of the SiRis are studied at different VBG. The application of VBG to turn ON the SiRi modulates the subthreshold slope (SS) and threshold voltage (VTH) of the control FET. Particularly, N-type pixels cannot be turned OFF due to the control NFET operating in the strong inversion regime. This is due to large VBG (≥25 V) application to turn ON the SiRi sensor. Conversely, the P-type SiRi sensors do not require large VBG to switch ON. Thus, P-type pixels exhibit excellent ION/IOFF ≥ 106, SS of 70–80 mV/dec and VTH of 0.5 V. These promising results will empower the large-scale cost-efficient production of SiRi based LOC sensors.

show abstract

High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

Cited by 3 publications

References 0 publications

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Wafer-scale HfO₂ encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Contact Info

Product

Resources

About

High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

Cited by 3 publications

References 0 publications

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Contact Info

Product

Resources

About

Wafer-scale HfO₂ encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment