High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Zhang, Kai; Kong, Yuechan; Zhu, Guangrun; Zhou, Jianjun; Yu, Xinxin; Kong, Cen; Li, Zhonghui; Chen, Tangsheng

doi:10.1109/led.2017.2687440

Cited by 92 publications

(42 citation statements)

References 16 publications

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“…The source‐drain distance ( L sd ), gate length ( L g ), fin length ( L fin ), and fin height ( H fin ) are 3.5 μm, 200 nm, 200 nm, and 40 nm, respectively. In this paper, the fin length and the gate length are designed to be equal and the fin body is aligned with the gate metal based on the self‐aligned process technology for the pursuit of a better on‐state performance . As shown in Figure A, for the fin‐shaped AlGaN/GaN HEMTs with trigate structure, the fin body is wrapped around by the gate metal on the top and two sidewalls.…”

Section: Device Structure and Modelmentioning

confidence: 99%

“…In this paper, the fin length and the gate length are designed to be equal and the fin body is aligned with the gate metal based on the self-aligned process technology for the pursuit of a better on-state performance. 19,20 As shown in Figure 2A, for the fin-shaped AlGaN/GaN HEMTs with trigate structure, the fin body is wrapped around by the gate metal on the top and two sidewalls. For the fin-shaped AlGaN/GaN HEMTs with dual-gate structure, as shown in Figure 2B, the fin body is controlled by the gate metal only on the two sidewalls.…”

Section: Introductionmentioning

confidence: 99%

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Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Zhang

et al. 2019

Int J Numerical Modelling

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In this paper, a systematic theoretical study on the fin-shaped AlGaN/GaN HEMTs with trigate structure and dual-gate structure is performed by TCAD simulation. The influence of different gate structures and fin width on the DC performance of the fin-shaped AlGaN/GaN high electron mobility transistors (HEMTs) are mainly studied and compared. A simplified physical analysis of the influence of fin width and gate structure on the threshold voltage is made. How to cite this article: Zhang M, Ma X, Mi M, et al. Influence of fin width and gate structure on the performance of AlGaN/GaN fin-shaped HEMTs. Int J Numer Model. 2019;e2641. https://doi.org/10.1002/jnm.2641 ZHANG ET AL. 7 of 7 performance of AlGaN/GaN fin-shaped HEMTs. Int J Numer Model. 2020;33:e2641. https://doi.

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Section: Device Structure and Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Zhang

et al. 2019

Int J Numerical Modelling

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“…J. Ma et al achieved 1350 V high breakdown voltage NC‐HEMT by using slanted tri‐gates and the power figure of merit (FOM) reached 1.2 GW/cm. In terms of high linearity microwave devices, K. Zhang et al made NC‐HEMT with high transconductance flatness by reducing source resistance, offered an obvious improvement of 5.5 dBc in IM3 characteristics at high pin level. With the expansion of the application range of GaN based NC‐HEMT, devices will inevitably work in high temperature environment in practical applications, which will affect their performance.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

Huang

Zhang

et al. 2019

Physica Status Solidi (a)

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In this work, three AlGaN/GaN nanowire channel high electron mobility transistors (NC-HEMTs) with different channel widths have been fabricated. The temperature dependent characteristics of NC-HEMTs are studied and compared with conventional HEMT. The results show that the on-state current density of NC-HEMTs have weaker temperature dependence, and the threshold voltage variation of NC-HEMTs is lower. In addition, the temperature characteristics of the drain-induced barrier lowering of NC-HEMT are first reported. Moreover, there are two main scattering mechanisms that influence the transconductance characteristics of NC-HEMT, phonon scattering and Coulomb scattering, which correspond to different gate voltage biases.

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“…Linearity is one of the most crucial figures of merit for the application of power amplifiers. For improving the device linearity, advanced device structures or epitaxial structure engineerings, such as field plate, nonlinear polarization dielectric, double-channel, and optimized barrier or cap layer thickness, have been explored [4][5][6][7]. Polarization Coulomb Field (PCF) scattering, which stems from the non-uniform distribution of the polarization charges at the AlGaN/GaN interface, is a particular scattering mechanism in AlGaN/GaN HFETs.…”

Section: Introductionmentioning

confidence: 99%

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Yahyazadeh

Hashempour

2019

JST

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A numerical model for the source-drain channel resistance based high electron mobility transistors has been developed that is capable to predict accurately the effects of polarization Coulomb Field Scattering (PCF), multi sub-band on source-drain channel resistance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition, to develop the model, accurate two-dimensional electron gas mobility and modified wave function in barrier AlGaN have been used. According to the numerical calculations, the effect of multi sub-band and PCF scattering on the increase of source-drain channel resistance is 35% and 65%, respectively, with the effect of PCF being almost twice as high as multi sub-band. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Cited by 92 publications

References 16 publications

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

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