High-linearity, low DC power GaAs HBT broadband amplifiers to 11 GHz

Nelson, B.; Perry, C.B.; Dixit, R.; Allen, B.; Kim, M.E.; Oki, A.K.; Camou, J.B.; Umemoto, D.K.

doi:10.1109/gaas.1989.69298

Cited by 20 publications

(3 citation statements)

References 3 publications

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“…Smaller parasitics from the bandgap engineering at the emitter-base junction combined with higher electron mobility make GaAs HBTs more suitable for high frequency and high power applications. GaAs HBTs also offer unusually high linearity at relatively low levels of dc bias power [1]. [2] showed that, in the baseemitter junction, the intermodulation (IM) current generated in the resistive part is partially cancelled by the IM current generated in the capacitive part, and that this phenomenon is largely responsible for the unusually good IM performance of these devices.…”

Section: Introductionmentioning

confidence: 99%

High-linearity two-watt power amplifier for multiband wireless applications

Faiz

Earles

Hou

et al. 2012

2012 Proceedings of IEEE Southeastcon

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Amplifiers in the final stages of wireless transmitters boost the power level of the up-converted signals, but the ultimate power level is not same for all transmitters. One specific amplifier can be used as a driver in a cellular base station or as last stage in applications like a pico-cell. However, the amplifier has to meet the stringent linearity requirement imposed by these different standards. In this paper, we present a highly linear single stage two watt power amplifier in GaAs HBT process. The amplifier can be externally matched at the input and output, thus provides flexibility to optimize it across a specific frequency band of interest between 400 MHz and 2700 MHz. The design includes a novel approach of utilizing the nonlinear base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to improve the linearity of the amplifier. The transistor provides a nonlinear feedback path between the output and input of the amplifier and thus minimizes the third order intermodulation distortion (IM3) component.

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Section: Introductionmentioning

confidence: 99%

High-linearity two-watt power amplifier for multiband wireless applications

Faiz

Earles

Hou

et al. 2012

2012 Proceedings of IEEE Southeastcon

View full text Add to dashboard Cite

show abstract

“…Smaller parasitics at the emitter-base junction combined with higher electron mobility make GaAs HBT more suitable for high frequency and high power applications. GaAs HBTs offer unusually high linearity at relatively low levels of dc bias power [1]. Excellent results in IP3 and adjacent channel power ratio (ACPR) were shown in [1][2][3] through linearity characterizations of GaAs and InP-based HBTs.…”

mentioning

confidence: 99%

“…GaAs HBTs offer unusually high linearity at relatively low levels of dc bias power [1]. Excellent results in IP3 and adjacent channel power ratio (ACPR) were shown in [1][2][3] through linearity characterizations of GaAs and InP-based HBTs. [4] showed that, in the base-emitter junction, the intermodulation (IM) current generated in the resistive part is partially cancelled by the IM current generated in the capacitive part, and that this phenomenon is largely responsible for the unusually good IM performance of these devices.…”

mentioning

confidence: 99%

A novel circuit to achieve high linearity in power amplifiers for WCDMA cellular base transceiver stations

Faiz

Earles

Hou

et al. 2012

WAMICON 2012 IEEE Wireless &Amp; Microwave Technology Conference

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This paper presents a novel circuit to minimize the third order intermodulation distortion component and thus improves the linearity of power amplifiers. The circuit utilizes the nonlinear base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to provide a nonlinear feedback path between the output and input of the amplifier. This concept was implemented in the design of a two watt power amplifier in InGaP/GaAs heterojunction bipolar transistor process. The design demonstrated 51 dBm of output third order intercept point at 17 dBm/tone output power level at 2140 MHz in the WCDMA band. The output P1dB was measured to be about 32 dBm. The amplifier is externally matched, thus provides flexibility to optimize the amplifier across a specific frequency band of interest between 400 MHz and 2700 MHz.

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