High-low polysilicon-emitter SiGe-base bipolar transistors

Crabbé, E.F.; Comfort, J.H.; Cressler, John D.; Sun, J.Y.-C.; Stork, J.M.C.

doi:10.1109/55.244736

Cited by 27 publications

(6 citation statements)

References 8 publications

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“…It was quickly realized that the larger valence band offset in SiGe with respect to Silicon can result in a valence band barrier even at low current injection if care is not taken in creating the SiGe profile for best optimization of the pnp [74,75]. Record SiGe-pnp high speed performance was soon achieved with peak Jr reaching 55 GHz [76][77][78][79][80][81], demonstrating that ion implanted base in un-doped SiGe epitaxial layers could be a viable candidate for the next generation of complementary bipolar technologies. ADCs and high-speed precision electronics.…”

Section: Emergen Ce Of Sige-pnpmentioning

confidence: 99%

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Babcock

Halbert

Yasuda

et al. 2016

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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The evolution of silicon and silicon-germ anium pnp trans is tors is reviewed in this paper. The motivation for SiGe-pnp trans is tors in Com plem entary Bipolar (CBi) andCBiCMOS is dis cus sed with a view on device param etric param eters that help gage the us efulnes s of thes e devices in analog and RF des ign.We review the bas ic proces s architectures and proces s build ing blocks for CBiCMOS.SiGe-pnp vers us Si-pnp perform ance metrics are highlighted followed by a discus s ion on circuit blocks that benefi t from having near matched com plem entary bipolar trans is tors.

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Section: Emergen Ce Of Sige-pnpmentioning

confidence: 99%

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Babcock

Halbert

Yasuda

et al. 2016

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…A 40 nm epitaxial "emitter-cap" layer doped with phosphorus at approximately 1x10'~ cm-3 was deposited in-situ in an ultra-high vacuum / chemical vapor deposition (UHV/CVD) tool [27] on top of the SiGe-base to form the EB junction [28]. It is important to C6-104 emphasize that while the idea of using a lightly-doped emitter structure in SiGe HBTs is not new, the present emitter-cap SiGe HBT is made in a unique, highly-integrated, self-aligned structure.…”

Section: Optimization Of Sige Hbt Technology For Cryogenic Operationmentioning

confidence: 99%

Operation of SiGe bipolar technology at cryogenic temperatures

Cressler

1994

J. Phys. IV France

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Abstract:The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make them particularly suitable for cryogenic operation. Using dc and ac experimental results, we also address the issues associated with profile optimization of SiGe HBTs for the cryogenic environment, the potential for cryogenic SiGe BiCMOS technologies, and present new results on liquid-helium temperature operation of SiGe HBTs. We conclude that SiGe HBT technology offers significant leverage for future cryogenic digital, analog and mixed-signal applications requiring the highest levels of perfomlance.

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“…The emitter-base bandgap energy di®erence is then much smaller than in III-V HBTs, and base dopings are consequently lower. 4-8 k−/square base sheet resistivity is typical of SiGe HBTs 13 . High electron velocities are a second signi¯cant advantage of III-V HBTs.…”

Section: Introductionmentioning

confidence: 99%

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Rodwell

Urteaga

Betser

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer processes, or -if contact resistivity is greatly reduced -by reducing the width of the base Ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f max and high gains in mm-wave ICs. Logic gate delays are primarily set by depletion-layer charging times, and neither fτ nor f max is indicative of logic speed. For high speed logic, epitaxial layers must be thinned, emitter and collector junction widths reduced, current density increased, and emitter parasitic resistance decreased. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f max is 1.1 THz. Transferred-substrate HBTs have obtained 295 GHz f τ . Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, 66 GHz master-slave flip-flops, and 18 GHz clock rate Δ-Σ ADCs.

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High-low polysilicon-emitter SiGe-base bipolar transistors

Cited by 27 publications

References 8 publications

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Operation of SiGe bipolar technology at cryogenic temperatures

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

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