High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature

Abstract

The current study explores the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate. The X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy results confirm the formation of a pure AlN wurtzite phase in the ME heterostructure. The magnetization vs temperature measurement shows the presence of the martensite transformation region of the NiMnIn/AlN heterostructure. The magnetic measurements exhibit the room temperature ferromagnetic nature of the NiMnIn/AlN heterostructure. The NiMnIn/AlN ME heterostructure was found to have a high ME coupling coefficient of ∼99.2 V/cm Oe at Hdc = 300 Oe. The induced ME coupling coefficient shows a linear dependency on Hac up to 8 Oe.

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

“…In most of the reported work, conventional metal electrodes and some metal oxides, 2D materials and single-phase multiferroics (BiFeO 3 ) as active switching layers have been used to fabricate the MIM structure [17][18][19][20]. However, the resistive switching in magnetoelectric (ME) heterostructures has not been explored, which could be more suitable for multifunctional device applications [17,21,22]. Artificial layered ME heterostructures consisting of piezoelectric and magnetostrictive layers display better ME coupling coefficient as compared to the single-phase multiferroic materials [21,22].…”

“…However, the resistive switching in magnetoelectric (ME) heterostructures has not been explored, which could be more suitable for multifunctional device applications [17,21,22]. Artificial layered ME heterostructures consisting of piezoelectric and magnetostrictive layers display better ME coupling coefficient as compared to the single-phase multiferroic materials [21,22].…”

“…The mechanical interaction between two layers leads to the strain-mediated coupling in ME heterostructure. Several combinations of piezoelectric and magnetostrictive materials and their ME voltage coupling coefficient have been studied [21][22][23]. Aluminum nitride (AlN) proved to be a potential candidate in ME devices due to its superior piezoelectric properties and large ME coupling with ferromagnetic material [21,24].…”

“…Several combinations of piezoelectric and magnetostrictive materials and their ME voltage coupling coefficient have been studied [21][22][23]. Aluminum nitride (AlN) proved to be a potential candidate in ME devices due to its superior piezoelectric properties and large ME coupling with ferromagnetic material [21,24]. Also, AlN has attracted much interest in ReRAM devices due to its low voltage/current operation, prevention of surface contamination and compatibility with CMOS technology [25,26].…”

Strain‐Induced Large Anomalous Nernst Effect in Polycrystalline Co2MnGa/AlN Multilayers

“…[ 31–33 ] Meanwhile, with excellent mechanical shock resistance, high thermal stability, low expansion coefficient, and low temperature preparation on flexible substrates, AlN films have also been widely utilized for wearable piezoelectric device applications. [ 34–36 ] Furthermore, atomically sharp and smooth interfaces with good uniformity were reported in CoPt/AlN, [ 37,38 ] CrN/AlN, [ 39,40 ] and NiMnIn/AlN multilayers [ 41 ] even after a high temperature annealing process. These features make AlN a candidate material for combining with the Co 2 MnGa layer in the multilayered form.…”