Currently, a considerable number of solution-processed high mobility p-type OTFTs have been obtained. [4-8] However, the achievement of high performance n-type OTFTs via solution processing is still challenging, yet important for the construction of organic circuits such as complementary metal-oxide-semiconductor (CMOS)-like circuits. [9-12] Reviewing of recent development has demonstrated that the highest reliable electron mobility from solution-processed OTFTs is 7.16 cm 2 V −1 s −1 to date. [11] To enhance the performance of conjugated polymer-based OTFTs, increasing the molecular order of the semiconductor thin film is an effective method. [13-18] Uniaxial alignment of conjugated polymer backbones can increase mobilities along the alignment direction via preferential intrachain transport. [19-21] Driven by directional flow due to Marangoni and capillary effect, bar coating is a valued solution processing technique to orient conjugated polymers for highly ordered thin films. [13,22-26] Besides, large ordered crystalline domains are generally accompanied by long range order, which is essential for high mobilities due to elongated carrier pathways and reduced grain boundaries. [19,27,28] Therefore, uniaxially aligned films featuring large crystalline domains are mostly desirable. In this work, we used a diketopyrrolopyrrole-based conjugated polymer, P4FTVT-C32, [29] as the semiconductor material, bar coating as the solution processing method for highly oriented films of large crystalline fibers. The corresponding OTFTs are characterized by electron mobility up to 9.38 cm 2 V −1 s −1 in the saturation regime and 8.35 cm 2 V −1 s −1 in the linear regime, and on/off ratio 10 5-10 6. Notably, these mobilities extracted according to the gradual channel approximation model is highly reliable since the devices are close to ideal transistors. This can be reflected by linear fitting of linear regime drain current and the square root of saturation regime drain current against gate voltage, the resulted independence of mobility on gate voltage, small gap between linear and saturation mobility, and high reliability factor >80%. To the best of our knowledge, these are the record high saturation and linear mobilities of n-type OTFTs, taking into account of the reliability.