High mobility and high stability glassy metal-oxynitride materials and devices

Lee, Eunha; Kim, Sang Woo; Benayad, Anass; Hur, Ji‐Hyun; Park, Gyeong‐Su; Jeon, Sanghun

doi:10.1038/srep23940

Cited by 25 publications

(19 citation statements)

References 53 publications

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“…3 In contrast to the conventional AOSs, amorphous ZnO x N y is an alloy of an oxide (ZnO, wurtzite) and a nitride (Zn 3 N 2 , anti-bixbyite) that have the same cation. A remarkable feature of amorphous ZnO x N y is its high electron Hall mobility, over 100 cm 2 V À1 s À1 , [4][5][6] which is comparable with the highest reported values for AOSs. 7,8 However, more recent studies using transmission electron microscopy (TEM) and electron diffraction revealed that these "amorphous" ZnO x N y thin films contained nanocrystals of ZnO and Zn 3 N 2 , 4 which would reduce their mobility through grain boundary scattering.…”

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confidence: 71%

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Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Yamazaki

Shigematsu

Hirose

et al. 2016

Applied Physics Letters

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Zinc oxynitride (ZnOxNy) has attracted much attention as an amorphous semiconductor with high electron mobility. Recent studies reported that ZnOxNy thin films grown by sputtering contained nanocrystals, which might reduce their electron mobility through grain boundary scattering. In this study, we fabricated amorphous ZnOxNy thin films on a glass substrate by a less-energetic nitrogen-plasma-assisted pulsed laser deposition (PLD) to suppress the formation of the nanocrystals. Grown by PLD under optimized conditions, these ZnOxNy thin films exhibited extremely flat surfaces with a root-mean-squared roughness (Rrms) of less than 0.3 nm. The Hall mobility of these films exceeded 200 cm2 V−1 s−1 at a critical carrier concentration of ∼1 × 1019 cm−3, which was twice as high as the reported values for sputter-deposited films. Meanwhile, the mobility of films with larger Rrms was limited to ∼160 cm2 V−1 s−1 even at the critical carrier concentration and comparable with that of the sputter-deposited ZnOxNy films. The substantial enhancement in mobility in extremely flat ZnOxNy films demonstrated that suppressing the formation of nanocrystals is the key to fabricating amorphous ZnOxNy thin films with very high mobility.

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confidence: 71%

“…In the previous studies, [3][4][5][6] ZnO x N y thin films were fabricated by reactive sputtering. However, sputtering frequently causes unintentional substrate heating 9,10 and collisions of high-energy particles with the film surface during deposition, which would induce crystallization of the film.…”

mentioning

confidence: 99%

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Yamazaki

Shigematsu

Hirose

et al. 2016

Applied Physics Letters

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“…However, it is claimed that due to the presence of multiple cations of different ionic sizes, the electronic conduction path is hindered, which limits the carrier mobility 29 . As an alternative to multi-cation amorphous metal oxides, a multi-anion approach towards amorphous semiconductors has been proposed and is being investigated experimentally and computationally [29][30][31][32][33][34][35][36] . Amorphous zinc oxynitride (a-ZnON), as a multi-anion amorphous semiconductor, has shown a great promise as a viable replacement of a-IGZO and the electron mobilities (Hall mobilities) exceeding 200 cm 2 /V.s have been experimentally reported 36 .…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Journal of Applied Physics

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Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.arXiv:1812.11333v3 [cond-mat.mtrl-sci]

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“…Novel physical properties of oxynitride thin films have been the center of extensive investigations due to their properties and the potential applications in a wide range of electronic and optoelectronic devices. For example, monometallic and bimetallic oxynitrides have been investigated as catalysts [1], lithium phosphorus oxynitrides have been applied in thin film lithium ion batteries [2], titanium oxynitride has been developed for optical hard coatings [3], titanium niobium oxynitride has been applied in photocatalysis [4], indium and indium tin oxynitrides have been used for specific applications like gas sensors and high temperature thin film thermocouples [5,6], aluminum oxynitride has been applied as transparent and conductive layers in optoelectronic devices [7], and zinc oxynitrides have been conceded as a strong substitute to conventional semiconductor film such as silicon due to high mobility value [8,9]. In this context, as general rule, amorphous oxynitrides have much higher charge carrier mobility than a-Si [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Physical properties of reactive RF sputtered a-IZON thin films.

et al. 2019

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The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

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High mobility and high stability glassy metal-oxynitride materials and devices

Cited by 25 publications

References 53 publications

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Physical properties of reactive RF sputtered a-IZON thin films.

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