High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Yoo, Kwang Su; Lee, Chi-Hoon; Kim, Dong-Gyu; Choi, Su-Hwan; Lee, Won-Bum; Park, Chang-Kyun; Park, Jin-Seong

doi:10.1016/j.apsusc.2023.158950

Applied Surface Science

2024

DOI: 10.1016/j.apsusc.2023.158950

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High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Kwang Su Yoo,

Chi-Hoon Lee,

Dong-Gyu Kim

et al.

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Cited by 5 publications

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Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Guo,

Wu,

et al. 2024

Adv Elect Materials

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Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD‐derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four‐probe measurements, reaching the level of low‐temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD‐derived InO film features advantages as compared to those of the PLD‐deposited and solution‐processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias‐stress stability of ALD‐derived TFTs can be improved with further passivation.

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Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Guo,

Wu,

et al. 2024

Adv Elect Materials

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Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics

Zheng,

Abliz,

Wan

2025

Applied Surface Science

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Solution-based surface modification method for high-performance ZnO transistors

Wang,

Dong,

Lin

et al. 2025

Applied Surface Science

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High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

Cited by 5 publications

References 45 publications

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics

Solution-based surface modification method for high-performance ZnO transistors

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