High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer

Bu, Ian Y.Y.; Flewitt, Andrew J.; Milne, W. I.

doi:10.1016/j.cap.2010.07.001

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…A great deal of interest has been devoted recently to silicon nanocrystals (Si-NCs) due to the potentiality of Si-NCs in nanoelectronic applications such as channel layer of thin films transistor leading to a great enhancement in carrier mobility [1], and in optoelectronic applications because Si-NCs is expected to exhibit a quantum size effect [2][3][4]. The origin of photoluminescence (PL) was described by the quantum confinement model and by the surface model.…”

Section: Introductionmentioning

confidence: 99%

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Haoues

Bouridah

Beghoul

et al. 2013

Materials Science in Semiconductor Processing

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Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70 %, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.10 12 /cm 2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.

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Section: Introductionmentioning

confidence: 99%

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Haoues

Bouridah

Beghoul

et al. 2013

Materials Science in Semiconductor Processing

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show abstract

“…Recently, there have been much interests on low temperature crystallization of silicon, due to their potential applications in solar cells [1] and thin film transistors (TFTs) [2]. Conventionally, the silicon crystallization process occurs through the solid phase crystallization (SPC) at a temperature above 600 o C under vacuum [3] or excimer laser annealing [4].…”

Section: Introductionmentioning

confidence: 99%

Aluminium Induced Crystallization of Amorphous Silicon via Solution Derived Catalyst

2013

AMM

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In this paper, aluminum induced crystallization (AIC) was studied by examining the effect of using solution derived AlCl3 catalyst. Such catalyst preparation method offers possibility of low-cost, non-vacuum solution process and allows examination of the role of alumina on the AIC process. The deposited AIC films were examined by using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy, X-ray diffraction (XRD) and four probe measurements. It was found that AIC process is highly dependent on annealing temperature and can occur at annealing temperatures above 500°C through Al2O3 formation. Based on the presented data, a possible growth model is proposed to clarify AIC mechanism.

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“…In the last years, silicon nanocrystals (Si-nc) have attracted a great attention due to the potentiality of Si-nc in nanoelectronic applications such as channel layer of thin films transistor leading to a great enhancement in carrier mobility [1], and in optoelectronic applications, because nc-Si is expected to exhibit a quantum size effect. Several methods tried to form silicon nanocrystals in silicon based materials [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

Bouridah¹,

Haoues²,

Beghoul³

et al. 2012

Acta Phys. Pol. A

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In this work, we investigate the formation of silicon nanocrystals in annealed low pressure chemical vapor deposition in situ nitrogen doped silicon thin films (SiN x ) obtained at low temperature (465 • C) by using a mixture of disilane (Si 2 H 6 ) and ammonia (NH 3 ). Results show that nitrogen content in films plays an important role in defining the obtained films morphology in terms of crystallites sizes and their distribution. Indeed, according to the nitrogen content introduced in films, the crystalline state of films varies from a submicron crystalline structure to a nanocrystalline structure. An average silicon nanocrystalline size of 10 nm was obtained for film with x = 0.07 nitrogen content, annealed under a temperature of 850• C during 2 h.

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High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer

Cited by 5 publications

References 17 publications

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Aluminium Induced Crystallization of Amorphous Silicon via Solution Derived Catalyst

Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

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