High-Mobility CVD-Grown Ge/Strained Ge_0.9Sn_0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

“…GeSn with a direct bandgap can emit light efficiently 4 and is compatible with COMS technology. [5][6][7] Noteworthy milestones like GeSn laser 2 have spurred a fast development in this research field. Besides the tunable bandgap, GeSn alloy is also predicted to hold high electron and hole mobility, which makes it a potential candidate material for both optoelectronic and electronic devices integrated on the Si platform.…”

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

“…They grew lateral Ge 1Àx Sn x /Ge MQW samples on Ge buffer/Si (100) substrate via molecular beam epitaxy (MBE). The designed MQW structures were formed from a Ge-buffer layer with a thickness of 500 nm by two-step growth, forming a 70 nm thick Ge buffer layer at a temperature of 300 C, covered by a 430 nm thick layer of Ge grown at 600 C. 97 Five quantum wells were grown of the composition 10 nm thick Ge 0.91 Sn 0.09 well layers at 190 C separated by 20 nm Ge barrier layers sandwiched between 150 nm thick n-and p-type Ge-cap layer to prevent Sn segregation in the GeSn layer, 98,99 as illustrated in Fig. 26a-c.…”

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

“…8,9) Therefore, Ge is supposed to serve as a performance booster for the future generation 3D sequential CFET device. 3) However, despite the strong mobility enhancement in ETB Ge p-channel MOSFET (pMOSFET), [10][11][12][13][14] Ge n-channel MOSFET (nMOSFET) still suffers the degradation of effective electron mobility. 15) In order to achieve a balanced Ge-based CMOS performance, various methods have been proposed to enhance the electron transport properties in Ge nMOSFETs, including thickness-induced band modulation, 16) optimized surface orientation, 17,18) and the tensile strain effect.…”