High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering

Nketia-Yawson, Vivian; Nketia‐Yawson, Benjamin; Jo, Jea Woong

doi:10.1016/j.apsusc.2023.156984

Cited by 13 publications

(9 citation statements)

References 49 publications

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“…[47] Consistent with a previous study, the electrolyte dielectric exhibited a high capacitance of over 10 μF cm −2 due to strong polarization through C-F interface dipoles of the fluorinated P(VDF-HFP) dielectric and the formation of electrical double layers by the movement of the EMIM-and TFSI-ion. [31,47] The high capacitance induces high charge carrier density, filling disorder-induced carrier traps at low gate bias voltage and facilitating smooth charge transport. [40][41][42] Moreover, electrolyte-gated perovskite transistors have been recently reported using conjugated polymers as interfacial functionalization layer (IFL).…”

Section: Ofet Performance Of Bdt-based Polymermentioning

confidence: 99%

“…This drastic improvement in the hole mobility of our conjugated polymer-capped perovskite OFETs compared to that of the control OFETs could be attributed to efficient bilayer channel formation and induction of a high charge carrier density in the hybrid perovskite-functionalized organic transistor channel due to the high-capacitance electrolyte dielectric and polymer-perovskite interactions. [30,31,44]…”

Section: Ofet Performance Of Bdt-based Polymermentioning

confidence: 99%

“…[26][27][28] Following the first demonstration of a perovskite transistor by Dimitrakopoulos et al, which achieved a hole mobility of ≈0.6 cm 2 V −1 s −1 , [29] diverse techniques and strategies have since been utilized to improve the charge-carrier mobility of emerging perovskite transistors in a bid to exceed those of conjugated polymers. [29][30][31][32][33][34] Our group recently demonstrated an interfacial functionalization strategy to passivate the perovskite surface with conjugated polymers, which enabled the use of highcapacitance electrolyte dielectrics. This approach allowed the fabrication and achievement of high-mobility perovskite transistors on rigid and flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

“…This approach allowed the fabrication and achievement of high-mobility perovskite transistors on rigid and flexible substrates. [30,31] To improve the performance of OFETs, it is necessary to optimize the pivotal parts, including the contact electrodes, gate dielectric, and the active semiconducting layer. [35,36] Highcapacitance gate dielectric materials, such as cross-linked insulating polymers, [37][38][39] ionic composites, [40][41][42] high-k materials, [43][44][45] and polymer electrolytes, [46][47][48] have evolved for transistor technology.…”

Section: Introductionmentioning

confidence: 99%

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Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Nketia‐Yawson,

Buer,

Ahn

et al. 2023

Macromol. Rapid Commun.

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Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite‐based electronics. Particularly, the charge carrier mobility of conjugated polymer semiconductors has been deemed to be a vital figure‐of‐merit for achieving high‐performance organic field‐effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2‐b:4,5‐b']dithiophene‐based conjugated polymer in perovskite‐functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA) gate dielectric, improvements in hole mobility of 0.019 cm2 V−1 s−1 are measured using an off‐center spin‐coating technique, which exceeds those of on‐center counterparts (0.22 ± 0.07 × 10−2 cm2 V−1 s−1). Furthermore, the mobility drastically increases by adopting solid‐state electrolyte gating, corresponding to 2.99 ± 1.03 cm2 V−1 s−1 for the control, and the best hole mobility is 8.03 cm2 V−1 s−1 (average ≈ 6.94 ± 0.59 cm2 V−1 s−1) for perovskite‐functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite‐functionalized organic transistor channel, resulting from the high‐capacitance electrolyte dielectric.

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Section: Ofet Performance Of Bdt-based Polymermentioning

confidence: 99%

Section: Ofet Performance Of Bdt-based Polymermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Nketia‐Yawson,

Buer,

Ahn

et al. 2023

Macromol. Rapid Commun.

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“…Transistors based on FAPbI 3 / P3HT heterojunction exhibited an ultrahigh mobility of 24.55 cm 2 V À1 s À1 , which was a consequence of the interaction between perovskite and P3HT, more efficient hole injection, and optimized contact. 132 Varying the conjugated polymer also had the potential to elevate the device performance. A remarkable mobility of 30.87 cm 2 V À1 s À1 was observed from a Py1/MAPbI 3 FET.…”

Section: Hoips As Channel Materials In Fetsmentioning

confidence: 99%

Organic–inorganic hybrid perovskite materials and their application in transistors

Liu¹,

Liu²,

Guo³

2023

Mater. Chem. Front.

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Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer

Huang,

Yang,

Ding

et al. 2024

Advanced Optical Materials

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Photosensitive field‐effect transistors (PhFETs) are three‐terminal photodetectors that enable photocurrent modulation and amplification through gate‐voltage control. Organic‐inorganic hybrid perovskites are known for their high photoelectric conversion efficiency, but ion migration in these materials causes gate‐field shielding, posing challenges for constructing PhFETs using only 3D perovskites. To address this issue, a heterojunction strategy is proposed using the stable and process‐compatible organic semiconductor poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) as the channel layer and the organic‐inorganic hybrid perovskite cesium‐doped formamidinium lead trihalide (FA0.9Cs0.1PbI3) as the light absorption layer. The bottom‐gate top‐contact PhFETs are fabricated using all‐solution processes. By comparing PhFET performance across three active‐layer structures (perovskite, P3HT, perovskite/P3HT) under dark and illuminated conditions, it is found that perovskite devices basically do not exhibit field‐effect but have the highest light‐to‐dark current ratio; P3HT devices exhibit field‐effect but weak photoresponse at 532 nm; in contrast, P3HT/perovskite heterojunction devices not only achieve field‐effect but also exhibit substantial photoresponse. The P3HT channel effectively modulates or amplifies the photocurrent and dark current of the heterojunction device, yielding nearly ten‐fold enhancements in responsivity and external quantum efficiency compared to perovskite devices, along with significantly improved response speed. This study advances the development of 3D organic‐inorganic hybrid perovskite PhFETs.

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High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering

Cited by 13 publications

References 49 publications

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

Organic–inorganic hybrid perovskite materials and their application in transistors

Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer

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