High Mobility Field Effect Transistors Based on Macroscopically Oriented Regioregular Copolymers

Tseng, Hsin; Ying, Lei; Hsu, Ben B. Y.; Pérez, Louis A.; Takacs, Christopher J.; Bazan, Guillermo C.; Heeger, Alan J.

doi:10.1021/nl303612z

Cited by 204 publications

(204 citation statements)

References 31 publications

(57 reference statements)

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“…[21][22][23][24] Fullerene addition in the semiconductor atop this dielectric layer also leads to improved stability ( Figure S16 To what extent this PC 61 BM addition can be applied generally was first tested by examining the ambipolar semiconducting polymer DT-PDPP2T-TT (Figure 1a). By using the initial OFET scans, we obtained similar transfer characteristics and average hole transport (μ = 0.51 ± 0.04 cm 2 V −1 s −1 ) to those reported in the literature (μ = 0.8 cm 2 V −1 s −1 ).…”

Section: Resultsmentioning

confidence: 99%

“…[19,[21][22][23][24] For PCDTPT, electron injection and accumulation at the SiO 2 gate dielectric interface has been implicated as a possible mechanistic rationale for the doubleslope. [25] Following this line of reasoning, it occurred to us that introducing the electron-deficient fullerene PC 61 BM into the semiconductor layer would perturb the influence and general distribution of injected electrons in the device (e.g., electrons could be trapped near the dielectric, transport in one of the semiconductors, or be trapped in one of the semiconductors).…”

Section: Introductionmentioning

confidence: 99%

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Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

Ford

Wang

Phan

et al. 2016

Adv Funct Materials

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Field-effect charge carrier mobilities (μ) exceeding 1 cm 2 V −1 s −1 have been reported in several polymers and small molecules. [7][8][9][10][11][12] However, in many cases, how to calculate mobility may be unclear to the extent that recent articles have highlighted this challenge. [7,13,14] Specifically, the slope of the square root of the drain current (I d ) versus gate voltage (V g ) is commonly used to calculate the saturation regime field-effect carrier mobility and in an ideal case should be constant across all V g . For μ, the dependence of I d on channel width (W), length (L), capacitance (C i ), and threshold voltage (V T ) is given by:The slope has been observed in several examples to increase with increasing V g . [15] In other cases, the opposite occurs; a larger slope is observed at low V g and decreases at high V g (i.e., a "double-slope"). [16][17][18] Please refer to the Supporting Information for particular examples from the literature. Figure 1a illustrates this so-called "double-slope" phenomenon by plotting experimentally-obtained I d 1/2 versus V g in the case of the polymer PCDTPT [19] (Figure 1b) next to a calculation of an ideal, single-slope curve. For the double-slope, μ is higher at small |V g | and decreases at larger |V g |, whereas the ideal case shows μ being independent of V g . In some cases, it can therefore be ambiguous how to calculate μ for a particular material under these circumstances, which prevents the goal of obtaining structure-electronic property relationships of general utility.There may be many different causes of the double-slope. Charge conduction in the bulk, rather than near the dielectric interface, contact resistance effects, and charge interaction with the dielectric layer have all been implicated as possible reasons. [7,20] In addition to deviations from ideality, changes in device characteristics through normal device operation are difficult to manage for practical applications. The value of μ, which represents the device current-driving capability, should be constant after multiple bias-sweeps so that the measured current at a particular voltage is invariant. Similarly, the V T drift (ΔV T ) should be minimized during device operation (i.e., a device should not be ON at a particular voltage and then switch to OFF at the same voltage), and the on/off ratio (I ON /I OFF ) should remain high to give well-defined ON and OFF states. Many high charge carrier mobility (μ) active layers within organic fieldeffect transistor (OFET) configurations exhibit non-linear current-voltage characteristics that may drift with time under applied bias and, when applying conventional equations for ideal FETs, may give inconsistent μ values.This study demonstrates that the introduction of electron deficient fullerene acceptors into thin films comprised of the high-mobility semiconducting polymer PCDTPT suppresses an undesirable "double-slope" in the currentvoltage characteristics, improves operational stability, and changes ambipolar transport to unipolar transport. Examinatio...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

Ford

Wang

Phan

et al. 2016

Adv Funct Materials

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“…When the transistors were fabricated by the polymer 216 with an M n of 34 kDa, a high mobility of 0.6 cm 2 V −1 s −1 was afforded. Similarly, when polymer molecular weight was increased, the corresponding hole mobilities also increased, from 0.8 cm 2 V −1 s −1 (M n = 100 kDa) to 2.5 cm 2 V −1 s −1 (M n = 300 kDa) [259]. The mobility of polymer 216 with high molecular weight (M n = 300 kDa) can be further improved to 6.7 cm 2 V −1 s −1 using the macroscopic alignment method, by which long-range orientation of the polymer chains was obtained.…”

Section: P-type Donor-acceptor Copolymer Semiconductorsmentioning

confidence: 93%

Organic Semiconductors for Field-Effect Transistors

Zhang

2015

Lecture Notes in Chemistry

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An important application of organic semiconductors is to fabricate organic field-effect transistors (OFETs) which are essential building blocks for the next generation of organic circuits. In terms of molecular size or molecular weight, organic semiconductors can be divided into small-molecule and polymer semiconductors, and thus their corresponding OFETs can also be categorized into organic small molecule OFETs and polymer field-effect transistors (PFETs). On the basis of the main charge carriers transporting in OFET channels, organic semiconductors can be further divided into p-type, n-type, and ambipolar semiconducting materials. According to the characteristic of the organic semiconductors, the OFETs can be classified into two types: organic thin film transistors (OTFTs) and organic single crystal transistors. In any kind of OFET devices, organic semiconductor materials are the core; their properties determine the performance of the electronic devices. Therefore, the design and synthesis of high performance organic semiconductor materials are the basis and premise of the wide application of OFET devices. In the past few decades, great progress has been made in developing organic semiconductors. Besides organic semiconducting materials, there are many other factors influencing the performance of OFETs including device configuration, processing technique, and other devices physical factors, etc. In the following, a brief review of the development of p-type, n-type, ambipolar organic semiconductors and their field-effect properties is given. The history, mechanism, configuration, and fabrication methods of OFET devices and main performance influencing factors of OFETs are also introduced.

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“…Therefore, reducing the torsional angles or using shape-persistent backbones might improve the effective conjugation length and thereby increase the intrachain transport. Furthermore, because the intrachain transport is much faster than the interchain one, polymers with higher molecular weight usually display higher mobilities, which has been demonstrated in many polymers [26,27].…”

Section: Charge Transport Mechanism In Conjugated Polymersmentioning

confidence: 99%

Introduction

Lei¹

2015

Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors

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Materials, energy, and information technology are widely considered as the three pillars of modern civilization. Materials science provides the basic platform for the exploration of new energy and the development of information technology, becoming one of the most important impetus for the development of human society. From the functional perspective, materials can be categorized into structural and functional materials. Structural materials are those that bear load. The key properties of materials in relation to bearing load are mechanical properties. They are broadly applied to construction, packaging, industrial production, etc. Functional materials display physical and chemical properties, such as optical, electrical, and magnetic proprieties which are of use. They are mainly used in high-tech industries, such as microelectronics, biology, and medicine. Because functional materials have played a key role in many cutting-edge technologies, they are currently becoming the core of materials science research. All materials are categorized as either organic or inorganic. For inorganic materials, atoms first form chemical bonds (e.g., ionic bond, covalent bond, and metallic bond), and then form solid materials by arranging themselves orderly. Inorganic materials are stable and have exhibited a lot of electronic properties. Conventional inorganic materials such as silicon-based semiconductors have been well developed and become the basis of new energy and information technology. Reduction in size often does more than simply make things smaller. In the last two decades, inorganic nanomaterials, including zero-dimensional quantum dots, one-dimensional nanowires and carbon nanotubes, and two-dimensional graphene, have experienced enormously growth. Apart from simply miniaturization, electronic, optical, magnetic, and mechanical properties will change significantly below certain size scale due to quantum confinement of electrons or Wannier excitons

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High Mobility Field Effect Transistors Based on Macroscopically Oriented Regioregular Copolymers

Cited by 204 publications

References 31 publications

Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

Organic Semiconductors for Field-Effect Transistors

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