High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics

Abstract

A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

“…30 Even on flexible substrates, GFETs fabricated from CVD graphene exhibit field-effect mobilities up to 4,900 cm 2 V -1 s -1 31 and maintain stable DC electronic properties at high levels of strain. [32][33][34][35][36][37] In this work we demonstrate GFETs fabricated from CVD graphene with f max of 3.7 GHz (at channel lengths of 500 nm) and strain limits of 1.75%. Fig.…”

Low-temperature solution-processed alumina dielectric films for low-voltage organic thin film transistors

“…In the last years, many insulating oxides with high k value and stability, such as HfO 2 , ZrO 2 , Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 and Al 4 O 3 (PO 4 ) 2 have been developed as gate dielectric in OTFTs [12][13][14]. Among them, Al 2 O 3 dielectrics have attracted intense interest due to its high k value (7.0-9.0) and big band-gap (8.45-9.9 eV) [15][16][17][18][19]. Moreover, Al 2 O 3 based dielectrics, such as sodium beta-alumina [20], Al 2 O 3 /polymer nanocomposite [21], aluminum titanate [22] have also widely employed for TFTs.…”

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

“…This was observed in the past too as self-healing property of Al 2 O 3 , where Al 2 O 3 thin films exhibit lower leakage currents on subsequent sweeps and explained by an electrical anneal phenomenon. 26 In our case, more stressed bonds (due to higher strain at lower bending radius) initially pass higher currents leading to a similar electrical annealing step which heals the device and makes it less prone to breakdown.…”