High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching
Yuan Huang,
Eli Sutter,
Bruce A. Parkinson
et al.
Abstract:Abstract2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few‐layer/multilayer SnSe2 gated by a solution top gate combines very high room‐temperature electron mobility (up to 800 cm2 V−1s−1), along with large on‐off current r… Show more
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