High Mobility in a Stable Transparent Perovskite Oxide

Kim, Hyung Joon; Kim, Useong; Kim, Hoon Min; Kim, Tai Hoon; Mun, Hyo Sik; Jeon, Byeong‐Gyun; Hong, Ki‐Ha; Lee, Woong-Jhae; Ju, Chanjong; Kim, Kee Hoon; Char, K.

doi:10.1143/apex.5.061102

Cited by 378 publications

(314 citation statements)

References 40 publications

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“…Ternary phases have also been studied, with promissing results both for transparent conducting and electronic application. [8,9] Theoretical work has mainly emphasized finding suitable combinations of band gap and hole effective mass [4].…”

Section: Introductionmentioning

confidence: 99%

Sn(II)-Containing Phosphates as Optoelectronic Materials

Zhang

et al. 2016

Chem. Mater.

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We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials SnnP2O5+n (n=2, 3, 4, 5) and a previously unreported compound, SnP2O6 (n=1), which we find using global optimization structure prediction. The electronic structure calculations indicate that these compounds all have large band gaps above 3.2 eV, meaning their transparency to visible light. Several of these compounds show relatively low hole effective masses (∼2-3 m0), comparable the electron masses. This suggests potential bipolar conductivity depending on doping. The dispersive valence band-edges underlying the low hole masses, originate from the anti-bonding hybridization between the Sn 5s orbitals and the phosphate groups. Analysis of structure-property relationships for the metastable structures generated during structure search shows considerable variation in combinations of band gap and carrier effective masses, implying chemical tunability of these properties. The unusual combinations of relatively high band gap, low carrier masses and high chemical stability suggests possible optoelectronic applications of these Sn(II) phosphates, including p-type transparent conductors. Related to this, calculations for doped material indicate low visible light absorption, combined with high plasma frequencies.

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Section: Introductionmentioning

confidence: 99%

Sn(II)-Containing Phosphates as Optoelectronic Materials

Zhang

et al. 2016

Chem. Mater.

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“…The time scale of the diffusion process is several hours, as long as that of BaSnO 3 , which was recently reported. 25 This is not surprising since the oxygen stability of the SnO 6 octahedra is not going to be much different whether in the rutile SnO 2 structure or in the perovskite BaSnO 3 structure. However, it is noteworthy that the oxygen vacancies in SnO 2−x do not cause faster diffusion than in fully oxidized BaSnO 3 .…”

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High electron mobility in epitaxial SnO2−x in semiconducting regime

et al. 2015

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We investigated the electronic transport properties of epitaxial SnO2−x thin films on r-plane sapphire substrates. The films were grown by pulsed laser deposition technique and its epitaxial growth direction was [101] and the in-plane alignment was of SnO2−x [010]//Al2O3[12̄10]. When the SnO2−x films were grown in the oxygen pressure of 30 mTorr, we have found the electron mobility of the 30 nm thick SnO2−x thin films strongly dependent on the thicknesses of the fully oxidized insulating SnO2 buffer layer. When the buffer layer thickness increased from 100 nm to 700 nm, the electron mobility of values increased from 23 cm2 V−1 s−1 to 106 cm2 V−1 s−1 and the carrier density increased from 9 × 1017 cm−3 to 3 × 1018 cm−3, which we attribute to reduction of large density of dislocations as the buffer layer thickness increases. In addition, we studied the doping dependence of the electron mobility of SnO2−x thin films grown on top of 500 nm thick insulating SnO2 buffer layers. The oxygen vacancy doping level was controlled by the oxygen pressure during deposition. As the oxygen pressure increased to 47.5 mTorr, the carrier density was found to decrease to 9.1 × 1016 cm−3 and the electron mobility values to 13 cm2 V−1 s−1, which is consistent with the dislocation limited transport properties. We also checked the conductance change of the SnO2−x during thermal annealing cycles, demonstrating unusual stability of its oxygen. The correlation between the electronic transport properties and microstructural defects investigated by the transmission electron microscopy was drawn. The excellent oxygen stability and high electron mobility of low carrier density SnO2−x films demonstrate its potential as a transparent oxide semiconductor.

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“…The resistivity, the mobility, and the carrier concentration of the 1% doped BLSO films for our pn-junctions are 0.0274 Ω·cm, 23.4 cm 2 /V·s, and 9.76 × 10 19 cm −3 , respectively, as previously reported. 23 We demonstrated pn junctions with two different p-type carrier concentration; 11% doped BKSO thin film for junction A and 6% doped BKSO thin film for junction B. I-V characteristics for both junctions measured at room temperature are shown in Fig. 2(b).…”

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confidence: 99%

“…23 Due to its excellent stability of oxygen in this materials, it has the doping possibility with p-type as well as n-type carrier. In this study, We deposited 100 nm think BKSO thin film (deposited at 700 • C) on 5 nm thick BSO buffer layer (deposited at 750 • C) on the SrTiO 3 (001) substrate using BaSnO 3 and K 2 SnO 3 (KSO) targets by pulsed laser deposition system with a KrF excimer laser (λ = 248 nm) under 100 mTorr oxygen pressure with 1-1.5 J/cm 2 fluence intensity.…”

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confidence: 99%

Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

Kim

Park

et al. 2016

APL Materials

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We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

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High Mobility in a Stable Transparent Perovskite Oxide

Cited by 378 publications

References 40 publications

Sn(II)-Containing Phosphates as Optoelectronic Materials

Sn(II)-Containing Phosphates as Optoelectronic Materials

High electron mobility in epitaxial SnO2−x in semiconducting regime

Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

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