High mobility metal-oxide thin film transistors with IGZO/In&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; dual-channel structure

Zhang, Yuqing; Fu, Haishi; Zhang, Shengdong

doi:10.1109/cad-tft.2018.8608103

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…[1][2][3][4] Numerous studies have been conducted on novel channel materials, new device structure, and post-process to explore the potential application in advanced displays. [5][6][7][8][9] In addition to the conventional applications of TFTs in display, publications of TFTs in ferroelectric field-effect transistors, neuromorphic computing devices, and memory cells indicate the potential application of ITO TFTs in new generation ICs. [10][11][12][13][14][15][16][17][18][19][20] Indium-tin-oxide (ITO) is a material widely used in optoelectronics and frequently used as the source/drain electrode of devices due to high transparency and high electron density exceeding 10 20 /cm 3 which is too high for the channel layer material.…”

Section: Introductionmentioning

confidence: 99%

High-performance nano-scale InSnO transistors

Xu,

Zhang,

Duan

et al. 2024

Jpn. J. Appl. Phys.

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Nanoscale short-channel oxide thin film transistors (TFTs) have attracted widespread research interest due to their potential applications in advanced display and memory devices. In this work, we fabricate indium-tin-oxide (ITO) TFTs with a series of channel lengths ranging from 10μm to 150nm. And through optimized process we successfully fabricate 130-nm channel length high performance ITO TFTs with an on-state current of 93 (μA/μm), a subthreshold swing (SS) of 102 (mV/decade) and on/off ratio over 107 at drain voltage of 3 V.

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Section: Introductionmentioning

confidence: 99%

High-performance nano-scale InSnO transistors

Xu,

Zhang,

Duan

et al. 2024

Jpn. J. Appl. Phys.

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“…Alternatively, TFTs with multistacked oxide semiconductors were proposed to modify the channel conduction, [ 15 ] where high carrier density channel acts as a mobility booster and low carrier density channel enhances the electrical stability. [ 15–28 ] To achieve superior electrical performance, most of the multistacked MOS channel engineering were performed on back‐channel etch (BCE) TFTs such as gate insulator (GI)/IZO/IGZO, [ 15 ] GI/Sn‐doped In 2 O 3 (ITO)/IGZO, [ 15 ] GI/ITO/Sn‐doped ZnO (ZTO), [ 16 ] and GI/IGZO/ZnO/IZO [ 25 ] without performing additional doping on either of the active channels. The mechanism of high mobility was not discussed including film density, surface morphology, energy band alignment, and interface properties between GI/active layer.…”

Section: Introductionmentioning

confidence: 99%

“…reported BCE multilayer GI/Ti:GZO/IGZO/Ti:GZO TFTs, [ 19 ] where the presence of Ga and Ti cations is claimed to provide better surface roughness, and efficiently suppress excess carriers to achieve positive V Th , but low μ FE and large I OFF are the trade‐offs. Other reports include high‐ k GI/IGZO/IGZO:Ti, [ 23 ] GI/IGZO:N/IZO:N, [ 24 ] GI/IZO:N/IGZO:N, [ 24 ] and GI/IZO:X/IZO [ 27 ] where X is either Al or Ga metals. These reports speculated that the presence of Ti, N, Al, and Ga cations improve μ FE , however, incorporation of Ga cation and N doping in the MOS layer is previously attributed to the reduction of μ FE by suppressing V O defects.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

Billah

Siddik

Kim

et al. 2021

Adv Elect Materials

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An amorphous indium gallium zinc oxide (a‐IGZO) layer is deposited on very thin conductive amorphous indium zinc oxide (a‐IZO) thin film to demonstrate high‐performance, coplanar thin‐film transistors (TFTs) with dual‐channel oxide semiconductor architecture. Based on material properties, a conduction band offset (∆EC) of ≈0.28 eV between a‐IZO and a‐IGZO layers and a conduction band bending of ≈0.3 eV at a‐IGZO/gate insulator (GI) interface exist. Through the electrical characterization, high field‐effect mobility (μFE) of ≈50 cm2 V−1 s−1, a positive threshold voltage (VTh) of ≈2.3 V, and low off‐current (IOFF) of <1 pA in coplanar a‐IZO/a‐IGZO TFT are demonstrated. The electron accumulation (>5 × 1018 cm−3) at both the a‐IZO/a‐IGZO and a‐IGZO/GI interfaces confirm the dual‐channel conduction. The bottom a‐IZO channel significantly contributes to increasing drain current (ID) due to large electron density (≈1019 cm−3). The dual‐channel coplanar TFT with a‐IGZO/IZO provides a guideline for overcoming the trade‐off between high μFE and positive VTh control for stable enhancement mode operation with increased ID.

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Fabrication and Characterization of High Mobility In2O3 TFT

Lee,

Kim,

et al. 2024

J. Flex. Print. Electron.

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We report fabrication of high-mobility In2O3 thin-film transistors (TFTs) and their characterization. In2O3 thin film was deposited by radio-frequency magnetron sputtering method and used as a channel layer. Electrical characterizations revealed excellent performance of the fabricated TFTs such as high ON current, large Imax/Imin ratio, and formation of good Ohmic junctions. Uniform transconductance was observed over large range of gate bias. Especially, transmission line method was applied for different gate overdrive bias Values to extract the effective gate lengths of the fabricated TFTs. This analysis enables to accurately derive the field effect mobility of the TFTs, where the maximum value was calculated to be 53.8 cm2/Vs.

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High mobility metal-oxide thin film transistors with IGZO/In<inf>2</inf>O<inf>3</inf> dual-channel structure

Cited by 3 publications

References 9 publications

High-performance nano-scale InSnO transistors

High-performance nano-scale InSnO transistors

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

Fabrication and Characterization of High Mobility In2O3 TFT

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