High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

Abstract

The authors demonstrated that N , NЈ-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide ͑PTCDI-C13͒ thin-film transistors ͑TFTs͒ exhibited high field-effect electron mobility of 2.1 cm 2 / V s by just annealing at an adequate temperature ͑140°C͒ after the TFT fabrications. While PTCDI-C13 formed c-axis oriented thin films, the thermal treatments improved crystallinity of the thin films as revealed by x-ray diffraction. The thermal treatment also affected thin-film morphologies; the morphologies changed from oval ball-like grains to flat and large tilelike grains, which had molecular height steps and whose size reached several micrometers.

Bis(arylene-ethynylene)-s-tetrazines: A Promising Family of n-Type Organic Semiconductors?

“…Actually for some Ar 2 Tz halogenated derivatives, the calculated electronic coupling values appear to be of the same order of magnitude than those reported before for the best naphthalene diimide 19 and perylene n-type semiconductors, 20,21 which have been successfully used in electronic devices. [22][23][24][25][26] Nevertheless, the high values of internal reorganization energy (λ i ) predicted for those Ar 2 Tz derivatives might preclude their use as reliable semiconducting materials.…”

Wet-processed n-type OTFTs utilizing highly-stable colloids of a perylene diimide derivative

“…This value is very close to that of vacuum deposited PTCDI-C13 films, 5.4×10 -3 cm 2 /Vs [32]. Moreover, the threshold voltages are also very close, 47 V vs. 44 V. This result means that PTCDI-C13 nanoparticle films deposited by drop-casting method using colloids can be used as good active layers of OTFTs.…”

“…The grain growth, however, is not as large as expected. In the case of vacuum deposited films, the grain size increased dramatically by post-annealing treatment up to a few micrometers which results in very high electron mobility of 2.1 cm 2 /Vs [32]. In this case, the increased grain size is still an order of several hundred nanometers which results in somewhat low mobility of 0.027 cm 2 /Vs.…”

“…PTCDI-C13 is a well known n-type material with fairly high electron mobility [32][33][34][35]. It, especially, has several phase transitions at relatively low temperature due to the long side alkyl chains, and the morphology of vacuum deposited films is largely changed by post-annealing treatment which also leads to the large change in the mobility of its devices [32,36,37].…”

“…It, especially, has several phase transitions at relatively low temperature due to the long side alkyl chains, and the morphology of vacuum deposited films is largely changed by post-annealing treatment which also leads to the large change in the mobility of its devices [32,36,37]. It is, however, not soluble in common solvents and cannot be handled by wet-processes.…”