2013
DOI: 10.7567/jjap.52.05dc11
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High-Mobility Organic Thin-Film Transistors Over 10 cm2 V-1 s-1 Fabricated Using Bis(benzothieno)naphthalene Polycrystalline Films

Abstract: We have synthesized novel thieno-fused compounds, bis(benzothieno)naphthalenes (BBTNs), and studied their thin-film transistors characteristics and thin-film properties. It was found that BBTN derivatives showed high mobilities (up to 15.6 cm2 V-1 s-1). In order to elucidate the origin of high mobilities of BBTNs, X-ray single-crystal structure analysis, XRD measurements, and thermal measurements were carried out. The results suggest that both the herringbone crystal packing and strong CH–π interaction between… Show more

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Cited by 14 publications
(10 citation statements)
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“…Recently, Kurihara et al. reported bis(benzothieno)naphthalene (BBTN) derivatives 12 that showed a mobility as high as 15.6 cm 2 V −1 s −1 for polycrystalline films 52. At the same time, Yasuda et al.…”
Section: Methodsmentioning
confidence: 96%
See 1 more Smart Citation
“…Recently, Kurihara et al. reported bis(benzothieno)naphthalene (BBTN) derivatives 12 that showed a mobility as high as 15.6 cm 2 V −1 s −1 for polycrystalline films 52. At the same time, Yasuda et al.…”
Section: Methodsmentioning
confidence: 96%
“…R and R′ are either n ‐alkyl or phenyl groups. 1 : 5–40 cm 2 V −1 s −1 ,26,27 2 : 1–11 cm 2 V −1 s −1 ,2831a,b 3 : 1–11 cm 2 V −1 s −1 ,5,6,32,33 4 : 5–40 cm 2 V −1 s −1 ,34,35 5 : 1.8–43 cm 2 V −1 s −1 ,7,3639 6 : 17.2 cm 2 V −1 s −1 ,40 7 : 2.8–11 cm 2 V −1 s −1 ,4146 8 : 3–16 cm 2 V −1 s −1 ,47,48 9 : 3.6–9.5 cm 2 V −1 s −1 ,49 10 : 7–11.2 cm 2 V −1 s −1 ,50 11 : 1–10 cm 2 V −1 s −1 ,51 12 : 3.3–15.6 cm 2 V −1 s −1 ,52 13 : 3.5–10.2 cm 2 V −1 s −1 53…”
Section: Introductionmentioning
confidence: 99%
“…A 3,10-ditetradecylpicene (picene-(C 14 H 29 ) 2 ) thin-film FET shows excellent characteristics, with its highest μ value reaching 21 cm 2 V −1 s −1 with a PbZr 0.52 Ti 0.48 O 3 (PZT) gate dielectric. This may be the highest value reported in an organic thin-film FET to date2930. The solution-deposited-film FET device was fabricated with CHCl 3 solvent.…”
mentioning
confidence: 93%
“…[ 50 ] A range of other alkylated phenylene-thiophene oligomers have also yielded high performance, including solution-grown microcrystals of alkylated dithienothiophene with mobilities up to 10.2 cm 2 V –1 s –1 [ 51 ] and vacuum-sublimed films of monoalkyl-functionalised BTBT (17.2 cm 2 V –1 s –1 )[ 52 ] and bisbenzothienonaphtalene (15 cm 2 V –1 s –1 ). [ 53 ]…”
Section: Introductionmentioning
confidence: 99%