2009
DOI: 10.1016/j.sna.2009.10.011
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High-mobility pentacene thin-film phototransistor with poly-4-vinylphenol gate dielectric

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Cited by 32 publications
(13 citation statements)
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“…As far as we know, the best performance was obtained for 4(HPBT)‐benzene films120 with a maximum responsivity of 4300 A W −1 for a low optical power of 7 µW cm −2 (at zero gate bias). Another important parameter is the ratio of on and off current switching; various efforts129–136 show that photosensitivity can vary from 10 3 up to 10 7 in the case of an OTFT using a 6,13‐bis(penylphenylethynyl) pentacene film122 and working in the off state. Moreover, the highest switching speed of a transistor with n‐type copper hexadecafluorophthalocyanine channel was measured at 10 ms 123.…”
Section: Organic Phototransistorsmentioning
confidence: 99%
“…As far as we know, the best performance was obtained for 4(HPBT)‐benzene films120 with a maximum responsivity of 4300 A W −1 for a low optical power of 7 µW cm −2 (at zero gate bias). Another important parameter is the ratio of on and off current switching; various efforts129–136 show that photosensitivity can vary from 10 3 up to 10 7 in the case of an OTFT using a 6,13‐bis(penylphenylethynyl) pentacene film122 and working in the off state. Moreover, the highest switching speed of a transistor with n‐type copper hexadecafluorophthalocyanine channel was measured at 10 ms 123.…”
Section: Organic Phototransistorsmentioning
confidence: 99%
“…When the γ=0.5 and γ=1, the recombination processes of OFET can be explained with bimolecular recombination process and monomolecular recombination process, respectively [33,34]. When the value of γ is between 0.5 and 1, it indicates the presence of a steady distribution of trapping centers in the mobility gap of the materials [35]. The bimolecular recombination is the process of direct recombination of photo-generated holes and electrons in the valence band (tail) and conduction band (tail).…”
Section: (A) (B)mentioning
confidence: 99%
“…The same correlation was reported for vacuum deposited films. [23][24][25][26][27] For thinner films printed at larger drop spacing of 20 lm, a high density of nanocrystalline is formed uniformly on either of the SAM-treated surfaces. It is inferred that the film growth on the SAM-treated substrates has been induced by interface nucleation; however, the crystal growth mode seems to be different.…”
Section: Printing and Characterization Of Tips-pen Filmsmentioning
confidence: 99%