High Mobility Pentacene Thin-Film Transistors on Photopolymer Modified Dielectrics

Abstract

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1 J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V-1 s-1.

Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors

“…3 and 4a, respectively. Fig 3 also shows the ratio R c /R ch at V GS = À30 V as a function of T. In agreement with the previously reported results [6,9,16], we found that the extracted R c values were varied in the range of 1-100 MX (Fig. 3).…”

“…(2), owing to the R c effect of Au electrodes. Chou et al have shown that the influence of the R c effect on the extractive l at room temperature can be very large [9]. However, the difference in l extracted from Eqs.…”

“…With decreasing device dimensions, the contact resistance (R c ) as part of the total device resistance will dominate compared with channel resistance (R ch ) and therefore will play an important part in device operations [7]. The impact of R c on the extracted mobility (l) has been extensively analyzed [8,9]. Klauk et al showed that for pentacene-based OTFTs with typical dimensions, R c can be many times greater than R ch [10].…”

Investigation of Solubility−Field Effect Mobility Orthogonality in Substituted Phenylene−Thiophene Co-oligomers

“…Ever so often, a material emerges in the literature as a promising organic semiconductor with very high performance characteristics (high mobility, low threshold voltage, etc. ), only for it to place unreasonably high demands on the method of manufacture that makes mass production virtually impossible. − Subtractive techniques such as lithography, and batch processing such as vapor deposition, that most of these reported materials require reduce throughput significantly and hence offset the performance benefits of these materials over their solution-processible counterparts. The latter class affords the capability for mass production by printing techniques such as gravure, offset, or flexography.…”

Charge-Localized Retention and Long-Term Memory Enabled by Cooperating Sterically Confined Molecular Crystallization with Spiro[fluorene-9,9′-xanthene]-Based Csp3-Hindrance

“…11,17,37,38 Organic field-effect transistors (OFET) based on pentacene with a planar molecule structure have significantly increased carrier mobility and enhance the performance of devices due to the crystallization effect. 37,38 However, some nonplanar molecules, especially those with Csp 3 -hindrance, exhibit enhanced charges localization properties in the crystalline state. 11,17 Yu et al designed a D−A type nanogrid serving as a high-performance trapping charge element for OFET memories.…”