High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

Shimizu, Kazuhiro; Sugiura, Osamu; Matsumura, Masakiyo

doi:10.1109/16.249432

Cited by 98 publications

(13 citation statements)

References 14 publications

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“…It is efficient in reducing the solidification velocity of the molten Si layer that using a-Si deposited by LPCVD as a precursor. Since solidification velocity during the melt-regrowth phase is too high for nuclei to grow sufficient, its reduction will be one of the key processes for enlarging the grain size [12,13]. And as well known, the PECVD Si-based thin film contains a certain content of hydrogen, while, the LPCVD one almost does not contain hydrogen.…”

Section: Contributedmentioning

confidence: 98%

The influence of Si precursor on poly‐Si crystallized by YAG laser

Yao

Wang

et al. 2010

Phys. Status Solidi (c)

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The influence of the Si-based crystallization precursor on the quality of the resulted poly-Si crystallized by 2ω YAG laser was investigated in this paper. Based on the simulation analysis, we suggested that the H content in crystallization precursor maybe one of main effect factors. It has been found that the lower H content in Si-based precursor, the better crystallinity of the resulted poly-Si is. By using the low H content Si-based film as the precursor, the poly Silicon with the grain size of about 500 nm crystallized by 2ω YAG was obtained at the relatively optimal crystallization conditions. Meanwhile, a dehydrogenation process before laser crystallization also could be omitted. It would be beneficial to lower cost of crystallization of a-Si.

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Section: Contributedmentioning

confidence: 98%

The influence of Si precursor on poly‐Si crystallized by YAG laser

Yao

Wang

et al. 2010

Phys. Status Solidi (c)

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“…For enhancing the electrical properties of poly-Si prepared by the excimer laser technique, the control of a cooling rate is one of the important factors since the nucleation and crystallization processes of the Si thin films is governed by a heat diffusion into the SiO 2 substrates [1,2]. For enhancing the electrical properties of poly-Si prepared by the excimer laser technique, the control of a cooling rate is one of the important factors since the nucleation and crystallization processes of the Si thin films is governed by a heat diffusion into the SiO 2 substrates [1,2].…”

Section: Introductionmentioning

confidence: 99%

Cooling Mechanism and Structural Change of Local Regions With a Different Cooling Rate of Excimer Laser Annealed Si

et al. 2006

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To investigate the cooling mechanism and the local structural changes of excimer laserannealed silicon (Si), molecular dynamics (MD) simulations were performed. Heat flow of molten Si showed a strong dependency of the local region during a natural cooling. An amorphous-to-liquid transition near an interface in the temperature range of 1600 K ~ 1800 K was expected with the results of the local diffusion coefficients calculated by integrating the velocity autocorrelation functions. It was confirmed that the structure of the interface region affected the cooling rate of the overall system. The structural properties at the various local regions after a cooling were assessed in terms of the configurational properties including the coordination and bond-angle distributions. A spontaneous nucleation of Si near a interface was observed during a natural cooling.

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“…[11][12][13] The advantages of laser annealing over standard annealing, furnace or RTA, are related to the short processing cycles that can be achieved with an excimer laser. 14) The good crystallinity of laser-annealed materials is often related to laser-induced melting and regrowth of the material.…”

Section: Introductionmentioning

confidence: 99%

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

Kim¹,

Park

Kim³

et al. 2003

Jpn. J. Appl. Phys.

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Polycrystalline gallium nitride (GaN) thin films of thickness 3.0 mm grown on silica glass substrates were annealed by a line beam of a KrF excimer laser under vacuum. The applied laser energy density was in the range of 300-600 mJ/cm 2 . Photoluminescence (PL) and X-ray diffraction (XRD) measurements have been carried out to investigate the laser annealing effects in polycrystalline GaN films grown on silica glass by metal-organic chemical vapor deposition (MOCVD). The results of the PL spectra revealed that the intensity of the band edge (BE) emission for the GaN on silica glass annealed at a laser energy density of 500 mJ/cm 2 was increased by as much as about 1.5 times in comparison with the as-grown GaN. It was found that the full width at half maximum (FWHM) of the XRD for laser annealed GaN film at a high laser energy density, 500 mJ/cm 2 , with 200 pulses was smaller than that of the as-grown GaN. These results indicate that the structural and optical properties of the poly-GaN layers grown on silica glass substrate are improved by the laser annealing method.

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High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

Cited by 98 publications

References 14 publications

The influence of Si precursor on poly‐Si crystallized by YAG laser

The influence of Si precursor on poly‐Si crystallized by YAG laser

Cooling Mechanism and Structural Change of Local Regions With a Different Cooling Rate of Excimer Laser Annealed Si

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

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