High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Yeom, Hye‐In; Ko, Jihoon; Mun, Geumbi; Park, S.-H. Ko

doi:10.1039/c6tc00580b

Cited by 104 publications

(90 citation statements)

References 42 publications

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“…The photoelectron peak for In 3d (Fig. 5) exhibits two peaks, corresponding to In 3d 5/2 and In 3d 3/2 [40]. Moreover, the S 2p peak splitting of 161.4 eV and 162.6 eV, a split energy with 1.2 eV, represents the S 2− in the nanocomposite sample [28].…”

Section: Resultsmentioning

confidence: 99%

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Chen

Niu

Song

2019

Beilstein J. Nanotechnol.

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Photocatalytic hydrogen generation from water splitting has become a favorable route for the utilization of solar energy. An effective strategy, the combination of C-doping with nanocomposite semiconductors, is presented in this work. C-doped g-C3N4 (CCN) was prepared by supramolecular self-assembly and subsequently a number of CdIn2S4/CCN composite photocatalysts were designed and fabricated though in situ decoration of CdIn2S4 crystals on the surface of CCN nanosheets via a hydrothermal method. This unique architecture was able to efficiently promote the transfer and separation of photon-generated charges, enhance light absorption, and significantly increase photocatalytic H2 production. Detailed characterization was performed to analyze the crystal structure, morphology, elementary composition, optical properties and catalytic mechanism. The CdIn2S4/CCN nanocomposites with optimal CdIn2S4 content exhibited a maximum H2 production rate of 2985 μmol h−1 g−1, almost 15 times more than that obtained using pure g-C3N4 (205 μmol h−1 g−1). In addition, the hybrid photocatalysts display good recycling stability under visible-light irradiation. This research may provide promising information for the preparation of more efficient multifunctional hybrid photocatalysts with excellent stability in fine chemical engineering.

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Section: Resultsmentioning

confidence: 99%

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Chen

Niu

Song

2019

Beilstein J. Nanotechnol.

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“…The characteristic peaks of Sn 4+ 3d 5/2 and Sn 4+ 3d 3/2 (488.0 and 496.5 eV) were identically recorded in T‐ and P‐SnO 2 TFs without shift, and O 1s peaks were clearly observed at 531.4 eV, which roughly suggests that the pure SnO 2 TFs formed regardless of the annealing method. To better understand the difference in chemical bonding of the two films, the O 1s peaks were deconvolved from the two spectra, where the individual peaks at lower and higher binding energies were originated from the lattice oxygen atoms in a fully coordinated environment (MOM), and the hydroxide species (MOH), respectively . The peak for MOM backbones, serving as electron conductance pathways, was more prominent in P‐SnO 2 TF than T‐SnO 2 , TF and the peak corresponding to MOH, playing a role as shallow trap sites, was slightly weak in the P‐SnO 2 TF.…”

mentioning

confidence: 99%

Superfast Room‐Temperature Activation of SnO₂ Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics

Yeom

Lee

et al. 2018

Advanced Materials

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The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has now exceeded 20%; thus, research focus has shifted to establishing the foundations for commercialization. One of the pivotal themes is to curtail the overall fabrication time, to reduce unit cost, and mass-produce PSCs. Additionally, energy dissipation during the thermal annealing (TA) stage must be minimized by realizing a genuine low-temperature (LT) process. Here, tin oxide (SnO ) thin films (TFs) are formulated at extremely high speed, within 5 min, under an almost room-temperature environment (<50 °C), using atmospheric Ar/O plasma energy (P-SnO ) and are applied as an electron transport layer of a "n-i-p"-type planar PSC. Compared with a thermally annealed SnO TF (T-SnO ), the P-SnO TF yields a more even surface but also outstanding electrical conductivity with higher electron mobility and a lower number of charge trap sites, consequently achieving a superior PCE of 19.56% in P-SnO -based PSCs. These findings motivate the use of a plasma strategy to fabricate various metal oxide TFs using the sol-gel route.

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“…As observed by the XPS, the film deposited at 100 °C has higher O-content and more O atoms may exist as oxygen interstitials or OH ligands. In addition, the possible-existing carbon content that has been reported to decrease with increasing substrate temperature may have influence on the refractive index [ 14 , 18 ]. A sharp decrease in refractive index at 150–200 °C was observed, which should be ascribed to the amorphous-to-crystalline transition.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, utilizing stronger oxidants, such as ozone (O 3 ) and O 2 plasma is a feasible approach to enhance the reaction of precursors, hence significantly increasing the growth rate of ALD-In 2 O 3 film [ 13 , 16 ]. Recently, In 2 O 3 film has been successfully prepared by ALD with the assistance of O 2 plasma [ 16 , 17 , 18 ]. In these studies, the influence of deposition temperature in the range of 70–400 °C on the In 2 O 3 film properties and the performance of the TFT device have been investigated, in the aim of capturing the ALD window and achieving suitable or optimal characteristics for device application.…”

Section: Introductionmentioning

confidence: 99%

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

et al. 2021

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Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Abstract: A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

Cited by 104 publications

References 42 publications

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Superfast Room‐Temperature Activation of SnO₂ Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

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High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Abstract: A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

Cited by 104 publications

References 42 publications

Synthesis of novel C-doped g-C3N4 nanosheets coupled with CdIn2S4 for enhanced photocatalytic hydrogen evolution

Synthesis of novel C-doped g-C3N4 nanosheets coupled with CdIn2S4 for enhanced photocatalytic hydrogen evolution

Superfast Room‐Temperature Activation of SnO2 Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

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Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Synthesis of novel C-doped g-C₃N₄ nanosheets coupled with CdIn₂S₄ for enhanced photocatalytic hydrogen evolution

Superfast Room‐Temperature Activation of SnO₂ Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics