High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhien; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

doi:10.1038/srep25000

Cited by 17 publications

(3 citation statements)

References 38 publications

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“…Furthermore, the XPS measurements on the Nd:IZO/Al 2 O 3 stacks can also unveil the effect of varying Nd:IZO thicknesses. As shown in Figure 6 a,b, a good agreement between variations in the binding energy of the Al 2 p peak and the ratio of (Nd/(Nd + In + Zn) at.%) implies that the higher concentration of Nd can also contribute to a stronger formation of Al–O bonds (reflected by the positive shift of the Al 2 p peak) [ 22 ], forming a tighter interface between Nd:IZO and Al 2 O 3 . The variation in Nd concentrations of the Nd:IZO films with varying thickness can be attributed to the different depositing rate of Nd/In/Zn atoms during the sputtering process.…”

Section: Resultsmentioning

confidence: 95%

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Yao

Zheng

et al. 2018

Materials

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In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.

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Section: Resultsmentioning

confidence: 95%

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Yao

Zheng

et al. 2018

Materials

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“…The absorption spectrum for LaB x thin film was shown in Figure 4 . The Tauc model [ 36 , 37 ] indicates the relationship between the photon energy ( hν ) and the optical-absorption coefficient ( a ). Additionally, the plot of ( ahν ) 1/2 vs. photon energy was shown in the inset in Figure 4 .…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

Xiao

Huang

Dong³

et al. 2018

Molecules

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For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs.

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“…In the past few years, amorphous oxide semiconductor (AOS) materials have attracted considerable attention as a new candidate in thin-film transistors (TFTs) for novel applications due to their unique advantages, such as high carrier mobility, wide optical band gap, large-area applicability, excellent atmosphere stability, and low-temperature processing. − AOS-based phototransistors as a key component of inorganic electronic devices have shown great application prospects, such as in wearable electronics, artificial synapses, and interactive displays. ,− …”

Section: Introductionmentioning

confidence: 99%

High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors

Han

Cao

Yang

et al. 2018

ACS Appl. Mater. Interfaces

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Amorphous oxide semiconductor (AOS) field-effect phototransistors (FEPTs) are promising candidates for emerging photodetectors. Unfortunately, traditional lateral AOS FEPTs suffer from low photosensitivity, slow response time and inadequate mechanical flexibility, which restrict their widespread commercial application. In this work, novel AOS-based vertical field-effect phototransistor (VFEPT) arrays are presented, where the semiconducting layer and source and drain electrodes are deposited by inkjet printing. Benefitted from the unique vertical structure and ultrashort channel length, the exciton dissociation, carrier transfer, and collection efficiency were dramatically enhanced, resulting in excellent photoelectric performance in VFEPT devices, which was better than that of the traditional lateral AOS phototransistors. Moreover, flexible AOS VFEPT arrays were investigated for the first time on polyimide substrates. Due to the unique vertical architecture, the carrier transport was negligibly affected by the strain-induced in-plane cracks of the semiconductor channel layer during the mechanical bending process, which overcame the maximum bending limit of traditional lateral AOS thin-film transistors to ensure a transistor technique that gives notable mechanical robustness against repeated mechanical bending. Hence, this work provided a new pathway in emerging applications for AOS photodetectors with sensitivity, transparency, and flexibility.

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High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Cited by 17 publications

References 38 publications

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors

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